We investigated the growth feasibility of polycrystalline Si film on mica substrate for the transfer of the layer to a plastic substrate. The annealing temperature was limited up to 600 ? C because of crack development in the mica substrate. Amorphous Si film was deposited on mica substrate by PECVD and was crystallized by furnace annealing. During the annealing, bubbles were formed at the Si/mica interface. The bubble formation was avoided by the Ar-plasma treatment before amorphous Si deposition. A uniform and clean polycrystalline Si film was obtained by coating NiCl 2 on the amorphous Si film and annealing at 500 ? C for 10 h. The conventional Si lithography was possible on the mica substrate and the devices fabricated on the substrate could be transferred to a plastic substrate.