직접접합 실리콘/실리콘질화막//실리콘산화막/실리콘 기판쌍의 선형가열에 의한 보이드 결함 제거

정영순; 송오성; 김득중; 주영철; Youngsoon Jung; Ohsung Song; Dugjoong Kim; Youngcheol Joo

Korean Journal of Materials Research, Vol.14, No.5, 315-321, May, 2004

DOI10.3740/MRSK.2004.14.5.315 Export Citation

직접접합 실리콘/실리콘질화막//실리콘산화막/실리콘 기판쌍의 선형가열에 의한 보이드 결함 제거

Eliminating Voids in Direct Bonded Si/Si 3 N 4 ?SiO 2 /Si Wafer Pairs Using a Fast Linear Annealing

정영순^†, 송오성 , 김득중, 주영철¹

서울시립대학교 신소재공학과
¹순천향대학교 기계공학과

Youngsoon Jung^†, Ohsung Song , Dugjoong Kim, and Youngcheol Joo¹

Department of Materials Science and Engieering, The University of Seoul, 90 Cheonnong-dong, Tongdaemun-gu, 130-743, Seoul, Korea
¹Department of Mechanical Engineering, Soonchunhyang University, Shinchang-myun, Asan-si, Chungnam, 336-745, Korea

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The void evolution in direct bonding process of Si/Si 3 N 4 ∥ SiO 2 /Si silicon wafer pairs has been investigated with an infrared camera. The voids that formed in the premating process grew in the conventional furnace annealing process at a temperature of 600 ? C . The voids are never shrunken even with the additional annealing process at the higher temperatures. We observed that the voids became smaller and disappeared with sequential scanning by our newly proposed fast linear annealing(FLA). FLA irradiates the focused line-shape halogen light on the surface while wafer moves from one edge to the other. We also propose the void shrinking mechanism in FLA with the finite differential method (FDM). Our results imply that we may eliminate the voids and enhance the yield for the direct bonding of wafer pairs by employing FLA.

Keywords:SOI;direct bonding;fast linear annealing;voids;FDM

[References]

Colinge JP, MRS Bulletin, 3(12), 16 (1988)
Zahn JD, Deshmukh AA, Pisano AP, Liepmann D, MEMS., The 14th IEEE International Conference on, 503 (2001) (2001)
Lasky JB, Appl. Phys. Lett., 48(1), 78 (1986)
Lee JW, Kang CS, Song OS, Ryu JH, Korean J. Mater. Res., 10(10), 665 (2000)
Joo YC, Lee JW, Song OS, Joo YC, Kang CS, J. Kor. Inst. Met. & Mater., 39(1), 110 (2001)
Kays WM, Crawford ME, Convective Heat and Mass Transfer, McGraw-Hill, Inc. NY, 327-329 (1980) (1980)
Holman JP, Heat Transfer, 8th ed., McGraw-Hill, Inc. NY, 354-355 (1997) (1997)
Incropera FP, DeWitt DP, Fundamentals of Heat and Mass Transfer, 5th ed., John Wiley & Sons, Inc. NY, 198-205 (2002) (2002)
Tannehill JC, Anderson DA, Pletcher RH, Computational Fluid Mechnics and Heat Transfer, 2nd ed., Tayler & Francis, 139-141 (1997) (1997)
Anderson JD, Jr., Computational Fluid Dynamics-The Basics with Applications, McGraw-Hill, Inc., NY, 243-247 (1995) (1995)

[Related Articles]

[1] Colinge JP, MRS Bulletin, 3(12), 16 (1988)

[2] Zahn JD, Deshmukh AA, Pisano AP, Liepmann D, MEMS., The 14th IEEE International Conference on, 503 (2001) (2001)

[3] Lasky JB, Appl. Phys. Lett., 48(1), 78 (1986)

[4] Lee JW, Kang CS, Song OS, Ryu JH, Korean J. Mater. Res., 10(10), 665 (2000)

[5] Joo YC, Lee JW, Song OS, Joo YC, Kang CS, J. Kor. Inst. Met. & Mater., 39(1), 110 (2001)

[6] Kays WM, Crawford ME, Convective Heat and Mass Transfer, McGraw-Hill, Inc. NY, 327-329 (1980) (1980)

[7] Holman JP, Heat Transfer, 8th ed., McGraw-Hill, Inc. NY, 354-355 (1997) (1997)

[8] Incropera FP, DeWitt DP, Fundamentals of Heat and Mass Transfer, 5th ed., John Wiley & Sons, Inc. NY, 198-205 (2002) (2002)

[9] Tannehill JC, Anderson DA, Pletcher RH, Computational Fluid Mechnics and Heat Transfer, 2nd ed., Tayler & Francis, 139-141 (1997) (1997)

[10] Anderson JD, Jr., Computational Fluid Dynamics-The Basics with Applications, McGraw-Hill, Inc., NY, 243-247 (1995) (1995)