Newly developed silicide materials for ULSI should have the appropriate electrical property of low resistant as well as process compatibility in conventional CMOS process. We prepared NiCoSi x silicides from 15 nm-Co/15 nm-Ni/Si structure and performed contact dry etch process to confirm the dry etch stability and compatibility of NiCoSi x layers. We dry etched the photoresist/SiO/silicide/silicon patterns with CF 4 andCHF 3 gases with varying powers from 100 to 200 W, and pressures from 45 to 65 mTorr, respectively. Polysilicon and silicon active layers without silicide were etched 0∼316\AA during over etch time of 3min, while silicon layers with proposed NiCoSi x silicide were not etched and showed stable surfaces. Our result implies that new NiCoSi x silicides may replace the conventional silicides due to contact etch process compatibility.