R.F Magnetron Sputtering법으로 제조한 TiO 2 박막의 특성

추용호; 최대규; Y.H. Chu; D.K. Choi

Korean Journal of Materials Research, Vol.14, No.11, 821-827, November, 2004

DOI10.3740/MRSK.2004.14.11.821 Export Citation

R.F Magnetron Sputtering법으로 제조한 TiO 2 박막의 특성

Characteristics of TiO 2 Thin Films Fabricated by R.E, Magnetron Sputtering

추용호^†, 최대규¹

전북대학교 신소재개발연구센터
¹전북대학교 공과대학 신소재공학부, 신소재개발연구센터

Y.H. Chu^†, and D.K. Choi¹

Research Center of Advanced Materials Development, Chonbuk National University, Korea
¹School of Advanced Materials Engineering, Chonbuk National University, Chonbuk, Korea

E-mail:

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at 30∼200watt R.F power range, and annealed at 600 ? C∼800 ? C for 1 hour. The properties of TiO 2 thin films were analyzed using x-ray, α?step , ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of TiO 2 thin film showed non-crystalline phase at R.F. power 30∼100 watt. The crosssection of TiO 2 thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

Keywords:titanium oxide thin films;growth;magnetron reactive sputtering;crystallinity;phase transition;eutectic;bond structure

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