ZrO 2 MIM 캐패시터의 구조, 표면 형상 및 전기적 특성

김대규; 이종무; Dae Kyu Kim; Chongmu Lee

Korean Journal of Materials Research, Vol.15, No.2, 139-142, February, 2005

DOI10.3740/MRSK.2005.15.2.139 Export Citation

ZrO 2 MIM 캐패시터의 구조, 표면 형상 및 전기적 특성

The Structure, Surface Morphology and Electrical Properties of ZrO 2 Metal-insulator-metal Capacitors

김대규, 이종무 ^†

인하대학교 공과대학 신소재공학부

Dae Kyu Kim, and Chongmu Lee^†

Department of Materials Science and Engineering, Inha University, 253 Yonghyeon-dong, Incheon 402-751, Korea

E-mail:

[ ZrO 2 ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the ZrO 2 gate dielectric thin films by decreasing the number of interfacial traps at the ZrO 2 /Si interface. The carrier transport mechanism is dominated by the thermionic emission.

Keywords:Gate dielectrics;rf-magnetron sputtering;I-V characteristic curve;C-V characteristic curve

[References]

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Kim ET, Yoon SG, Thin Solid Films, 227, 7 (1993)
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Garcia-Hipolito M, Martinez E, Alvarez-Fregoso O, Falcony C, Aguilar-Frutis MA, J. Mater. Sci. Lett., 20(19), 1799 (2001)
Lee BH, Kang L, Nieh R, Qi WJ, Lee J, Appl. Phys. Lett., 76, 1926 (2000)
Lubig A, Buchal C, Gugg D, Thin Solid Films, 217, 125 (1992)
Amora SB, Rogier B, Baud G, Jacquet M, Nardin M, Mater. Sci. Eng. B, 57, 28 (1998)
Kim JS, Marzouk HA, Reucroft PJ, Thin Solid Films, 254(1-2), 33 (1995)
Guinebretiere R, Soulestin B, Dauger A, Thin Solid Films, 319(1-2), 197 (1998)
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Garvie RC, Gross MF, J. Mater. Sci., 21, 1253 (1986)
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Gusev EP, Cartier E, Gribelyuk DA, Copel M, Schmidt HO, Emic CD, Microelectronic Engineering, 59, 341 (2001)

[Related Articles]

[1] Wilk GD, Wallace RM, Anthony JM, 'High-k gate dielectrics: current status and material properties considerations,' Journal of Applied Physics, vol. 89, 5243 (2001) (2001)

[2] Stemmer S, Chen Z, Keding R, J. Appl. Phys., 92, 82 (2002)

[3] Houssa M, Autran JL, Stesmans A, Heyns MM, Appl. Phys. Lett., 81, 709 (2002)

[4] Hu YZ, Tay SP, J. Vac. Sci. Technol. B, 19(5), 1706 (2001)

[5] Duparre A, Welsch E, Walter HG, Kaiser N, Mueller H, Hacker E, Lauth H, Meyer J, Weissbrodt P, Thin Solid Films, 250, 1 (1994)

[6] Kim ET, Yoon SG, Thin Solid Films, 227, 7 (1993)

[7] Xu XD, Muenchausen RE, Nogar NS, Pique A, Edwards R, Wilkens B, Ravi TS, Wang DM, Chen CY, Appl. Phys. Lett., 58, 304 (1991)

[8] Garcia-Hipolito M, Martinez E, Alvarez-Fregoso O, Falcony C, Aguilar-Frutis MA, J. Mater. Sci. Lett., 20(19), 1799 (2001)

[9] Lee BH, Kang L, Nieh R, Qi WJ, Lee J, Appl. Phys. Lett., 76, 1926 (2000)

[10] Lubig A, Buchal C, Gugg D, Thin Solid Films, 217, 125 (1992)

[11] Amora SB, Rogier B, Baud G, Jacquet M, Nardin M, Mater. Sci. Eng. B, 57, 28 (1998)

[12] Kim JS, Marzouk HA, Reucroft PJ, Thin Solid Films, 254(1-2), 33 (1995)

[13] Guinebretiere R, Soulestin B, Dauger A, Thin Solid Films, 319(1-2), 197 (1998)

[14] JCPDS-ICDD file 17-0923, 27-0997, 42-1164, 50-1089, 20-0684, 49-1642

[15] Garvie RC, Gross MF, J. Mater. Sci., 21, 1253 (1986)

[16] Sze SM, Physics of Semiconductor Devices, 2nd Edition, Wiley, New York, (1981) (1981)

[17] Gusev EP, Cartier E, Gribelyuk DA, Copel M, Schmidt HO, Emic CD, Microelectronic Engineering, 59, 341 (2001)