아크용해법으로 제조된 Skutterudite CoSb 3 의 열전특성

유신욱; 박종범; 조경원; 장경욱; 어순철; 이정일; 김일호; S.W. You; J.B. Park; K.W. Cho; K.W. Jang; S.C. Ur; J.I. Lee; I.H. Kim

Korean Journal of Materials Research, Vol.15, No.2, 93-96, February, 2005

DOI10.3740/MRSK.2005.15.2.093 Export Citation

아크용해법으로 제조된 Skutterudite CoSb 3 의 열전특성

Thermoelectric Properties of Skutterudite CoSb 3 Prepared by Arc Melting

유신욱, 박종범, 조경원, 장경욱¹, 어순철 , 이정일, 김일호 ^†

충주대학교 신소재공학과/나노기술연구소
¹한서대학교 신소재공학과

S.W. You, J.B. Park, K.W. Cho, K.W. Jang¹, S.C. Ur , J.I. Lee, and I.H. Kim^†

Department of Materials Science and Engineering/NT Lab., Chungju National University, Korea
¹Department of Advanced Materials Engineering, Hanseo University, Korea

E-mail:

The arc melting was employed to prepare undoped CoSb 3 compounds and their thermoelectric properties were investigated. Specimen annealed at 400 ? C for 24 hrs showed sound microstructure. However, considerable voids and cracks were found after annealing at above 500 ? C . It seems to be attributed to the phase dissociation and thermal expansion due to phase transitions during annealing and cooling. Single phase δ?CoSb 3 was successfully obtained by annealing at 400 ? C for 24 hrs. In the case of increasing annealing temperature, phase decompositions occurred. Undoped CoSb 3 showed p-type conduction and intrinsic semiconducting behavior at all temperatures examined. Thermoelectric properties were remarkably improved by annealing and they were closely related to phase transitions.

Keywords:skutterudite;thermoelectric;arc melting

[References]

Caillat T, Borshchevski A, Fleurial JP, J. Appl. Phys., 80(8), 4442 (1996)
Kim IH, Choi GS, Han MG, Kim JS, Lee JI, Ur SC, Hong TW, Lee YG, Ryu SL, Mater. Sci. Forum, 449, 917 (2004)
Anno H, Matsubara K, Notohara Y, Sakakibara T, Tashiro H, J. Appl. Phys., 86(7), 3780 (1999)
Meisner GP, Morelli DT, Hu S, Yang J, Uhre C, Phys. Rev. Lett., 80(16), 3551 (1998)
Kitagawa H, Hasaka M, Morimura T, Nakashima H, Kondo S, Mater. Res. Bull., 35(2), 185 (2000)
Fleurial JP, Caillat T, Borshchevskth A, Proc. 13th Intl. Conf. Thermo electrics, 40 (1994)
Uher C, Hu S, Yang J, Proc. 17th IntI. Conf. Thermoelectrics, 306 (1998)
Nolas GS, Lyon HB, Cohn 1L, Tritt TM, Slack GA, Proc. 16th Intl. Conf. Thermoelectrics, 321 (1997)
Sharp JW, Jones EC, Williams RK, Martin PM, Sales BC, J. Appl. Phys., 78(2), 1013 (1995)
Nolas GS, Slack GA, Tritt TM, Morelli DT, Proc. 14th Intl. Conf. Thermoelectrics, 236 (1995)
Caillat T, Borshchevski A, Fleurial JP, Proc. 13th Intl. Conf. Thermoelectrics, 58 (1994)
Feschotte P, Lorin D, J. Less-Common Metals, 155, 255 (1989)

[Related Articles]

[1] Caillat T, Borshchevski A, Fleurial JP, J. Appl. Phys., 80(8), 4442 (1996)

[2] Kim IH, Choi GS, Han MG, Kim JS, Lee JI, Ur SC, Hong TW, Lee YG, Ryu SL, Mater. Sci. Forum, 449, 917 (2004)

[3] Anno H, Matsubara K, Notohara Y, Sakakibara T, Tashiro H, J. Appl. Phys., 86(7), 3780 (1999)

[4] Meisner GP, Morelli DT, Hu S, Yang J, Uhre C, Phys. Rev. Lett., 80(16), 3551 (1998)

[5] Kitagawa H, Hasaka M, Morimura T, Nakashima H, Kondo S, Mater. Res. Bull., 35(2), 185 (2000)

[6] Fleurial JP, Caillat T, Borshchevskth A, Proc. 13th Intl. Conf. Thermo electrics, 40 (1994)

[7] Uher C, Hu S, Yang J, Proc. 17th IntI. Conf. Thermoelectrics, 306 (1998)

[8] Nolas GS, Lyon HB, Cohn 1L, Tritt TM, Slack GA, Proc. 16th Intl. Conf. Thermoelectrics, 321 (1997)

[9] Sharp JW, Jones EC, Williams RK, Martin PM, Sales BC, J. Appl. Phys., 78(2), 1013 (1995)

[10] Nolas GS, Slack GA, Tritt TM, Morelli DT, Proc. 14th Intl. Conf. Thermoelectrics, 236 (1995)

[11] Caillat T, Borshchevski A, Fleurial JP, Proc. 13th Intl. Conf. Thermoelectrics, 58 (1994)

[12] Feschotte P, Lorin D, J. Less-Common Metals, 155, 255 (1989)