무전해 도금법으로 제조된 Ni-B 확산 방지막의 Cu 확산 거동

최재웅; 황길호; 한원규; 이완희; 강성군; Jae Woong Choi; Gil Ho Hwang; Won Kyu Han; Wan Hee Lee; Sung Goon Kang

Korean Journal of Materials Research, Vol.15, No.9, 577-584, September, 2005

DOI10.3740/MRSK.2005.15.9.577 Export Citation

무전해 도금법으로 제조된 Ni-B 확산 방지막의 Cu 확산 거동

Cu Diffusion Behavior of Ni-B Diffusion Barrier Fabricated by Electroless Deposition

최재웅^†, 황길호, 한원규, 이완희, 강성군

한양대학교 재료공학부

Jae Woong Choi^†, Gil Ho Hwang, Won Kyu Han, Wan Hee Lee, and Sung Goon Kang

Division of Materials Science and Engineering, Hanyang University, Seoul, Korea 133-791

E-mail:

Thin Ni-B layer, [Math Processing Error] thick, was electrolessly deposited on Cu electrode fabricated by electro-deposition. The purpose of the layer is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier. The layers were annealed at [Math Processing Error] with and without pre-annealing at [Math Processing Error] for . 30minutes. In the layer with pre-annealing, the amount of Cu diffusion was lower about 5 times than the layer without pre-annealing. The difference in Cu concentration may be attributed to [Math Processing Error] formation prior to Cu diffusion. However, the difference in Cu concentration decreased during the annealing time of 5 h due to the grain growth of Ni.

Keywords:electroless Ni-B deposition;HR-XRD;diffusion barrier

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Sankara Narayanan TSN, Seshadri SK, J. Alloys and Comp., 365, 197 (2004)
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[Related Articles]

[1] Matsumoto S, Electronic Display Devices, Wiley, 140 (1999) (1999)

[2] Uchiike H, Lin H, Kamiya M, IDW, 49 (1995)

[3] Sethi G, Plasma display panels enter commercial arena, Laser Focus World, 253 (1998) (1998)

[4] Voronov AA, Dedov VP, J. Opt. Technol., 66(6), 51 (1999)

[5] Danovitch D, Dang H, Information Display, 11, 26 (1999)

[6] Kim DK, Trans. On EEM., 13(8), 45 (2000)

[7] Singer P, Semicond. Int., 21, 90 (1998)

[8] Singer P, Semicond. Int., 17, 52 (1994)

[9] Sheppard D, Weil R, Semicond. Int., 20, 67 (1997)

[10] Mikkola RD, Jiang QT, Carpenter B, Plat. Surf. Finish., 87, 81 (2000)

[11] Rye C, Kwon K, Loke ALS, Lee H, Nogami T, Dubin M, Kavari RA, Ray GW, Wong SS, IEEE Trans. Electron Devices, 46, 1113 (1999)

[12] Choi JW, Hwang GH, Hong SJ, Kang SG, Kor. J. Mat. Res., 14(8), 552 (2004)

[13] Shacham-Diamand Y, Dedhia A, Hoffstetter D, Oldham WG, J. Electrochem. Soc., 140, 2427 (1993)

[14] Raghavan G, Chiang C, Anders PB, Tzeng SM, Villasol R, Bai G, Bohr M, Fraser DB, Thin Solid Films, 262(1-2), 168 (1995)

[15] Mallory GO, Hajdu JB, Electroless Plating, AESF, 5 (1990)

[16] Choi JW, Hong SJ, Lee HY, Kang SG, Kor. J. Mat. Res., 13(2), 101 (2003)

[17] Zhang H, Zhang X, Zhang YK, Plat. & Surf. finish., 80(4), 80 (1993)

[18] Gaevskaya TV, Novotortseva IG, Tsybulskaya LS, Met. Finish., 94, 100 (1996)

[19] Masui K, Met. Finish, 84, 33 (1986)

[20] Sankara Narayanan TSN, Seshadri SK, J. Alloys and Comp., 365, 197 (2004)

[21] Li H, Li H, Deng JF, Mat. Lett., 41 (2001)