반응성 스퍼터링법에서의 RF전력, 기판온도 및 가스유량비가 WC x 막의 기계적 특성에 끼치는 효과

박연규; 이종무; Y.K. Park; C.M. Lee

Korean Journal of Materials Research, Vol.15, No.10, 621-625, October, 2005

DOI10.3740/MRSK.2005.15.10.621 Export Citation

반응성 스퍼터링법에서의 RF전력, 기판온도 및 가스유량비가 WC x 막의 기계적 특성에 끼치는 효과

Effects of RF Power, Substrate Temperature and Gas Flow Ratio on the Mechanical Properties of WC x Films Deposited by Reactive Sputtering

박연규, 이종무 ^†

인하대학교 신소재공학부

Y.K. Park, and C.M. Lee^†

Department of Materials Science and Engineering, Inha University, Inchon, 402-751, Korea

E-mail:

fects of rf power, pressure, sputtering gas composition, and substrate temperature on the deposition rate of the WC x coatings were investigated. The effects of rf power and sputtering gas composition on the hardness and corrosion resistance of the WC x coatings deposited by reactive sputtering were also investigated. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses were performed to determine the structures and compositions of the films, respectively. The hardnesses of the films were investigated using a nanoindenter, scanning electron microscopy, ana a salt-spray test, respectively. The deposition rate of the films was proportional to rf power and inversely proportional to the CH 4 content of Ar/CH 4 sputtering gas. The deposition rate linearly increased with increasing chamber pressure. The hardness of the WC x coatings Increased as rf power increased. The highest hardness was obtained at a Ar/CH 4 concentration of 10vol.% in the sputtering gas. The hardness of the WC x film deposited under optimal conditions was found to be much higher than that of the electroplated chromium film, although the corrosion resistance of the former was slightly lower than that of the latter.

Keywords:tungsten carbide;sputtering;deposition rate;hardness;corrosion resistance

[References]

Meyers B, Lynn S, Surface Engineering ASM International, 5, 925 (1994)
Pakala M, Lin RY, Surf. & Coat. Thechnol., 81, 233 (1996)
Chen A, Qiu X, Sridharan K, Home WG, Dodd RA, Surf. & Coat. Thchnol., 82, 305 (1996)
Batis G, Pautazopoulou P, Routoulas A, Methods and Mater, 48, 107 (2001)
Herman H, Sampath S, Metallugical and Ceramic Protective Coatings, ed. Stern KH (St Edmundsbury Press, Suffolk, Great Britain, 1996) (1996)
Kramer BE, Judd PK, J. Vac. Sci & Technol. A, 3, 2439 (1985)
Srivastava DK, Tao TV, Vankar VD, Chopra KL, J. Vac. Sci. Technol. A, 2, 2161 (1984)
Rack PD, Peterson JJ, Li J, Geiculescu AC, Rack HJ, J. Vac. Sci. Technol. A, 19(1), 62 (2001)
Sundgren JE, Johansson BO, Karlsson SE, Thin Solid Films, 105, 353 (1983)
Wong MS, Chia WJ, Surf. & Coat. Thechnol., 86-87, 381 (1996)
Davidse PD, Maissel LI, J. Appl. Phys., 37, 574 (1966)
Evans P, Noreika AJ, Phil. Mag., 13, 717 (1996)
Krikorian E, Sneed RJ, J. Appl. Phys., 37, 3665 (1966)
Esteve J, Zambrano G, Rincon C, Martinez E, Galindo H, Prieto P, Thin Solid Films, 373(1-2), 282 (2000)

[Related Articles]

[1] Meyers B, Lynn S, Surface Engineering ASM International, 5, 925 (1994)

[2] Pakala M, Lin RY, Surf. & Coat. Thechnol., 81, 233 (1996)

[3] Chen A, Qiu X, Sridharan K, Home WG, Dodd RA, Surf. & Coat. Thchnol., 82, 305 (1996)

[4] Batis G, Pautazopoulou P, Routoulas A, Methods and Mater, 48, 107 (2001)

[5] Herman H, Sampath S, Metallugical and Ceramic Protective Coatings, ed. Stern KH (St Edmundsbury Press, Suffolk, Great Britain, 1996) (1996)

[6] Kramer BE, Judd PK, J. Vac. Sci & Technol. A, 3, 2439 (1985)

[7] Srivastava DK, Tao TV, Vankar VD, Chopra KL, J. Vac. Sci. Technol. A, 2, 2161 (1984)

[8] Rack PD, Peterson JJ, Li J, Geiculescu AC, Rack HJ, J. Vac. Sci. Technol. A, 19(1), 62 (2001)

[9] Sundgren JE, Johansson BO, Karlsson SE, Thin Solid Films, 105, 353 (1983)

[10] Wong MS, Chia WJ, Surf. & Coat. Thechnol., 86-87, 381 (1996)

[11] Davidse PD, Maissel LI, J. Appl. Phys., 37, 574 (1966)

[12] Evans P, Noreika AJ, Phil. Mag., 13, 717 (1996)

[13] Krikorian E, Sneed RJ, J. Appl. Phys., 37, 3665 (1966)

[14] Esteve J, Zambrano G, Rincon C, Martinez E, Galindo H, Prieto P, Thin Solid Films, 373(1-2), 282 (2000)