Dependence of Nanotopography Impact on Fumed Silica and Ceria Slurry Added with Surfactant for Shallow Trench Isolation Chemical Mechanical Polishing

Kyu-Chul Cho; Hyeongtag Jeon; Jea-Gun Park

Korean Journal of Materials Research, Vol.16, No.5, 308-311, May, 2006

DOI10.3740/MRSK.2006.16.5.308 Export Citation

Dependence of Nanotopography Impact on Fumed Silica and Ceria Slurry Added with Surfactant for Shallow Trench Isolation Chemical Mechanical Polishing

Kyu-Chul Cho, Hyeongtag Jeon, and Jea-Gun Park^{1, †}

Department of Material Science & Engineering, Hanyang University, Korea
¹Nano-SOI Process Laboratory, Hanyang University, Seoul 133-791, Korea

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The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.

Keywords:nanotopography;STI;CMP;slurry;Preston's law

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[1] Park JG, Katoh T, Yoo HC, Park JH, Jpn. J. Appl. Phys., 40, L857 (2001)

[2] Park JG, Katoh T, Yoo HC, Lee DH, Paik UG, Jpn. J. Appl. Phys., 41, L17 (2002)

[3] Nojo H, Kodera M, Nakata R, Proc. IEEE idem, San Francisco, CA, 1996 (The Institute of Electrical and Electronics Engineers, Piscataway, 1996) p. 349 (1996)

[4] Hirai K, Ohtsuki H, Ashizawa T, Kurata Y, Hitachi Chemical Tech. Report, 35, 17 (2000)

[5] Tateyama Y, Hirano T, Ono T, Miyashita N, Yoda T, Proc. Int. Symp. Chemical Mechanical Planarization IV, (The Electrochemical Society, Pennington, 2000) p. 297, 297 (2000)

[6] Homma Y, Furusawa T, Kusukawa K, Nagasawa M, Proc. CMP-MIC, Santa Clara, CA, 1996 (Institute for Microelectronics Inter-Connection, Tampa, 1996) p. 67, 67 (1996)

[7] Miyajima M, Syosetsu Handoutai CMP Gijyutsu (Details of Semiconductor CMP Technology) ed. T. Doi, (Kogyochosakai, 2000, Tokyo) p. 249 [in Japanese], 249 (2000)

[8] Preston FW, J. Soc. Glass Tech., 11, 247 (1927)

[9] Katoh T, Kim SJ, Paik U, Park JG, Jpn. J. Appl. Phys., 42, 5430 (2003)

[10] Kang HG, Katoh T, Paik U, Park JG, Jpn. J. Appl. Phys., 43, L1 (2004)

[11] Katoh T, Kim MS, Paik U, Park JG, Jpn. J. Appl. Phys., 43, L217 (2002)

[12] Lee B, Ph.D Thesis, Dept. of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Massachusetts, 2002

[13] Boning D, Lee B, Materials Research Society Bulletin, 27, 761 (2002)

[14] Chekina OG, Keer LM, Liang H, J. Electrochem. Soc., 145(6), 2100 (1998)