화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.16, No.6, 360-366, June, 2006
DOI10.3740/MRSK.2006.16.6.360  Export Citation
RF 마그네트론 스퍼터링 방법으로 SiO2/Si(100) 기판위에 성장시킨 ZnO 박막의 구조 및 광특성
Structural and Optical Properties of ZnO Thin Films Grown on SiO2/Si(100) Substrates by RF Magnetron Sputtering
한석규, 홍순구†, 김효진, 이재욱1, 이정용1
  • 충남대학교 재료공학과
  • 1한국과학기술원 신소재공학과
Seok Kyu Han, Soon-Ku Hong†, Hyojin Kim, Jae Wook Lee1, and Jeong Yong Lee1
  • Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, Korea
  • 1Departmnet of Materials Science & Technology Divisiont, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
E-mail:
A series of ZnO thin films were grown by radio-frequency (RF) magnetron sputtering with various RF powers on (100) substrates at . Thicknesses of the investigated ZnO films were fixed to about 250nm by changing the growth time based on the changes of growth rates with RF powers. All the ZnO thin films were grown with <0001> preferred orientation. Average grain sizes of about 250nm-thick ZnO films evaluated by FE-SEM, AFM, and TEM were increased by decreasing the RF power. Structural properties addressed by FWHM values of XRD (0002) omega rocking curves and their intensities were better for the smaller grain sized ZnO films grown with high RF powers, which implies small values of tilt for smaller grain sized ZnO films. However, optical properties addressed by intensities of band edge emissions from room temperature and low temperature photoluminescence were better for the larger grain sized ZnO films with low RF power, which implies grain boundaries acted as nonradiation recombination centers.
Keywords:ZnO;RF magnetron sputtering;PL;TEM;grain size;grain boundary;nonradiation recombination
  1. Meng LJ, Dossantos MP, Thin Solid Films, 250(1-2), 26 (1994)
  2. Laks DB, Van de Walle CG, Neumark GF, Pantelides ST, Appl. Phys. Lett., 63(10), 1375 (1993)
  3. Masuda S, Kitamura K, Okumura Y, Miyatake S, Tabata H, Kawai T, J. Appl. Phys, 93(3), 1624 (2003)
  4. Service RE, Science, 276(5314), 895 (1997)
  5. Soki T, Hatanaka Y, Look DC, Appl. Phys. Lett., 76(22), 3257 (2000)
  6. Yamamoto H, Saiga N, Nishimori K, Appl. Surf. Sci., 169-170, 616 (2001)
  7. Takahashi N, Kaiya K, Omichi K, Nakamura T, Okamoto S, Yamamoto H, J. Cryst. Growth, 209(4), 822 (2000)
  8. Ayouchi R, Martin F, Leinen D, Ramos-Barrado JR, J. Cryst. Growth, 247(3-4), 497 (2003)
  9. Hong SK, Chen Y, Ko HJ, Wenisch H, Hanada T, Yao T, J. Electron. Mat., 30, 647 (2001)
  10. Ondo-Ndong R, Ferblantier G, Al Kalfioui M, Boyer A, Foucaran A, J. Cryst. Growth, 255(1-2), 130 (2003)
  11. No YS, Kim TW, Jung YS, Choi WK, Appl. Phys. Sci. (2006)
  12. Hwang DK, Bang KH, Jeong MC, Myoung JM, J. Cryst. Growth, 254(3-4), 449 (2003)
  13. Zhang Y, Du G, Liu D, Wang X, Ma Y, Wang J, Yin J, Yang X, Hou X, Yang S, J. Crystal Growth., 243(34), 439 (2002)
  14. Kim HW, Kim NH, Materials Science and Engineering B, 103(3), 297 (2003)
  15. Lu YM, Hwang WS, Liu WY, Yang JS, Mater. Chem. Phys., 72(2), 269 (2001)
  16. Klug HP, Alexander LE, X-ray Diffraction Procedures 2nd ed., p.655-704, Wiley-Interscience, USA, (1974) (1974)
  17. Cullity BD, Stock SR, Elements of X-Ray Diffraction 3rd ed., p.388, Prentice Hall, New Jersey, USA, (2001) (2001)
  18. Duclere JR, Mc Loughlin C, Fryar J, O'Haire R, Guilloux-Viry M, Meaney A, Perrin A, McGlynn E, Henry MO, Mosnier JP, Thin Solid Films, 500(1-2), 78 (2006)
  19. Matsumoto T, Kato H, Miyamoto K, Sano M, Zhukov EA, Yao T, Appl. Phys. Lett., 81(7), 1231 (2002)
  20. Jeoug Sh, Kim JK, Lee BT, J. Phys. D: Appl. Phys., 36(16), 2017 (2003)