RF 마그네트론 스퍼터링법으로 증착한 ZnO:Er 박막형광체의 발광 특성

송현돈; 김영진; Hyundon Song; Young Jin Kim

Korean Journal of Materials Research, Vol.16, No.7, 401-407, July, 2006

DOI10.3740/MRSK.2006.16.7.401 Export Citation

RF 마그네트론 스퍼터링법으로 증착한 ZnO:Er 박막형광체의 발광 특성

Photoluminescence of ZnO:Er Thin Film Phosphors Deposited by RF Magnetron Sputtering

송현돈, 김영진 ^†

경기대학교 재료공학과

Hyundon Song, and Young Jin Kim^†

Department of Materials Science and Engineering, Kyonggi University, Suwon, 443-760, Korea

E-mail:

ZnO is well-known as a promising material for optical communication systems and electronic displays. ZnO:Er thin films were deposited on c-plane sapphire substrates by rf magnetron sputtering, and the effects of sputtering parameters and the annealing conditions on the luminescence in the visible range were investigated. Luminescent properties depended on the crystallinity of films and annealing atmosphere. Highly c-axis oriented ZnO:Er films showed a strong emission band at 465 nm and a weak emission at 525 nm due to the energy transition of , respectively. ZnO:Er thin films annealed at air atmosphere were superior to those annealed in in photoluminescence intensity.

Keywords:ZnO;phosphors;erbium;photoluminescence;thin film;sputtering

[References]

Ohnishi S, Hirogawa Y, Shiosaki T, Kawabata A, Jpn. J. Appl. Phys., 17(5), 773 (1978)
Klingshirin C, Phys. Stat. ol. B, 71, 547 (1975)
Reynold DC, Look DC, Jogai B, Marko H, Solid State Commun., 101, 643 (1997)
Zhang XT, Liu YC, Ma JG, Lu YM, Shen DZ, Xu W, Zhong GZ, Fan XW, Thin Solid Films, 413(1-2), 257 (2002)
Nause JE, Cermet Inc., 12, 4 (1999)
Vanheusden K, Seager CH, Warren WL, Tallant DR, Voigt JA, Appl. Phys. Lett., 68, 403 (1996)
Song H, Kim YJ, Kor. J. Matrl. Res., 16, 58 (2006)
Lounsbury JB, J. Vac. Sci. Technol., 6, 838 (1969)
Reynold DC, Look DC, Jogai B, Marko H, Solid State Commun, 101, 643 (1997)
Bachir S, Azuma K, Kossanyi J, Valat P, Ronfard-Haret JC, J. Lumin., 75, 35 (1997)
Fukudome T, Kaminaka A, Ishiki H, Saito R, Yugo S, Kimura T, Nucl. Instr. and Meth. In Phys. Res. B, 206, 287 (2003)
Kim YJ, Kim YT, Yang HK, Park JC, Han JI, Lee YE, Kim HJ, J. Vac. Sci. Technol. A, 15(3), 1103 (1997)
Aita CR, Lad RJ, J. Appl. Phys., 51, 6405 (1980)

[Related Articles]

[1] Ohnishi S, Hirogawa Y, Shiosaki T, Kawabata A, Jpn. J. Appl. Phys., 17(5), 773 (1978)

[2] Klingshirin C, Phys. Stat. ol. B, 71, 547 (1975)

[3] Reynold DC, Look DC, Jogai B, Marko H, Solid State Commun., 101, 643 (1997)

[4] Zhang XT, Liu YC, Ma JG, Lu YM, Shen DZ, Xu W, Zhong GZ, Fan XW, Thin Solid Films, 413(1-2), 257 (2002)

[5] Nause JE, Cermet Inc., 12, 4 (1999)

[6] Vanheusden K, Seager CH, Warren WL, Tallant DR, Voigt JA, Appl. Phys. Lett., 68, 403 (1996)

[7] Song H, Kim YJ, Kor. J. Matrl. Res., 16, 58 (2006)

[8] Lounsbury JB, J. Vac. Sci. Technol., 6, 838 (1969)

[9] Reynold DC, Look DC, Jogai B, Marko H, Solid State Commun, 101, 643 (1997)

[10] Bachir S, Azuma K, Kossanyi J, Valat P, Ronfard-Haret JC, J. Lumin., 75, 35 (1997)

[11] Fukudome T, Kaminaka A, Ishiki H, Saito R, Yugo S, Kimura T, Nucl. Instr. and Meth. In Phys. Res. B, 206, 287 (2003)

[12] Kim YJ, Kim YT, Yang HK, Park JC, Han JI, Lee YE, Kim HJ, J. Vac. Sci. Technol. A, 15(3), 1103 (1997)

[13] Aita CR, Lad RJ, J. Appl. Phys., 51, 6405 (1980)