높은 열처리 온도를 갖는 GOI 웨이퍼의 직접접합

변영태; 김선호; Young Tae Byun; Sun Ho Kim

Korean Journal of Materials Research, Vol.16, No.10, 652-655, October, 2006

DOI10.3740/MRSK.2006.16.10.652 Export Citation

높은 열처리 온도를 갖는 GOI 웨이퍼의 직접접합

Direct Bonding of GOI Wafers with High Annealing Temperatures

변영태^†, 김선호

한국과학기술연구원 광기술연구센터

Young Tae Byun^†, and Sun Ho Kim

Photonics Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea, 136-791

E-mail:

A direct wafer bonding process necessary for GaAs-on-insulator (GOI) fabrication with high thermal annealing temperatures was studied by using PECVD oxides between gallium arsenide and silicon wafers. In order to apply some uniform pressure on initially-bonded wafer pairs, a graphite sample holder was used for wafer bonding. Also, a tool for measuring the tensile forces was fabricated to measure the wafer bonding strengths of both initially-bonded and thermally-annealed samples. GaAs//Si wafers with 0.5-m-thick PECVD oxides were annealed from . Maximum bonding strengths of about 84 N were obtained in the annealing temperature range of . The bonded wafers were not separated up to . As a result, the GOI wafers with high annealing temperatures were demonstrated for the first time.

Keywords:GaAs-on-Insulator (GOI);Wafer direct bonding;PECVD oxide;Bonding strength

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[1] Han PD, Zou J, Appl. Phys. Lett., 72, 2424 (1998)

[2] Binsma J, Thijs P, VanDongen T, Jansen E, Staring A, Van-DenHoven G, Tierneijer L, IEICE Trans. Electron., E80-C, 675 (1997)

[3] Aoki M, Suzuki M, Sano H, Kawano T, ldo T, Taniwatari T, Uomi K, Takai A, IEEE J Quantum Electron., 29, 2088 (1993)

[4] Tong QY, Gosele UM, “ Semiconductor Wafer Bonding: Science and Technology" , John Wiley & Sons, lnc, pp.205 (1999).

[5] Bruel M, Electron. Lett., 31, 1201 (1995)

[6] Park JK, Byun YT, Park J, Sae Muli, 51, 322 (2005)

[7] Byun YT, Kim HK, Sae Muli, 46, 297 (2003)

[8] Byun YT, Jhon YM, Kim SH, Sae Muli, 51, 254 (2005)

[9] Kim HK, Kim TG, Kim SH, Byun YT, Han SK, Woo HJ, in Proceedings of the Optical Society of Korea Annual Meeting 2004 (Chonnam National University, Korea, 12-13 February 2004), pp.314-315.

[10] Byun YT, Kim HK, Kim TG, Kim SH, Han SK, Woo HJ, in Pr‘oceedings of the Optical Society of Korca Annual Meeting 2004 (Chonnam National University, Korea, 12-13 February 2004), pp.316-317.

[11] Byun YT, Kim JH, Kim SH, Korea, patent nurnber 10-0507331, 2005.

[12] Wada H, Kamijoh T, Jpn. J. Appl. Phys., 33(9A), 4878 (1994)

[13] Ogawa S, lrnada M, Nodab S, Appl. Phys. Lett., 82, 3406 (2003)