증착조건과 진공열처리 온도에 따른 ITO/PES 박막의 특성 연구

이재영; 박지혜; 김유성; 천희곤; 유용주; 김대일; Jae Young Lee; Ji Hye Park; Yu Sung Kim; Hui Gon Chun; Yong Zoo You; Daeil Kim

Korean Journal of Materials Research, Vol.17, No.4, 227-231, April, 2007

DOI10.3740/MRSK.2007.17.4.227 Export Citation

증착조건과 진공열처리 온도에 따른 ITO/PES 박막의 특성 연구

Properties of ITO on PES film in dependence on the coating conditions and vacuum annealing temperatures

이재영, 박지혜, 김유성, 천희곤, 유용주, 김대일^†

울산대학교 첨단소재공학부

Jae Young Lee, Ji Hye Park, Yu Sung Kim, Hui Gon Chun, Yong Zoo You, and Daeil Kim^†

School of Materials Science and Engineering, Ulsan University, San 29 Mugeo-dong, Nam-gu, Ulsan 680-749, Korea

E-mail:

Transparent conducting indium tin oxide (ITO) films were deposited onto the Polyethersulfone (PES)substrate by using a magnetron sputter type negative metal ion source. In order to investigate the influence of cesium (Cs) partial pressure during deposition and annealing temperature on the optoelectrical properties of ITO/PES film the films were deposited under different Cs partial pressures and post deposition annealed under different annealing temperature from 100oC to 170oC for 20 min at 3 × 10.1 Pa. Optoelectrical properties of ITO films deposited without intentional substrate heating was influenced strongly by the Cs partial pressure and the Cs partial pressure of 1.5 × 10.3 Pa was characterized as an optimal Cs flow condition. By increasing post-deposition vacuum annealing temperature both optical transmission in visible light region and electrical conductivity of ITO films were increased. Atomic force microscopy (AFM) micrographs showed that the surface roughness also varied with post-deposition vacuum annealing temperature.

Keywords:ITO;Flexible substrate;Magnetron sputtering;Figure of merit

[References]

Chopre K, Major S, Pandya D, Thin Solid Films, 102, 1 (1983)
Sanon G, Rup R, Mansingh A, Thin Solid Films, 190, 287 (1990)
Hamberg I, Granqvist C, J. Appl. Phys., 60, R123 (1986)
Morgan DV, Aliyu YH, Bunce RW, Salehi A, Thin Solid Films, 312(1-2), 268 (1998)
Kulkarni A, Schulz K, Lim T, Khan M, Thin Solid Films, 308, 1 (1997)
Kim D, Vacuum, 81, 279 (2006)
Kim D, Kim S, J. Vac. Sci. Technol. A, 20(4), 1314 (2002)
Paik N, Appl. Surf. Sci., 226(4), 412 (2004)
Lin L, Lai F, Qu Y, Gai R, Mat. Sci. Eng. B., 138, 166 (2007)
Kim DH, Park MR, Lee HJ, Lee GH, Appl. Surf. Sci., 253(2), 409 (2006)
Fallah HR, Ghasemi M, Hassanzadeh A, Steki H, Mater. Res. Bull., 42(3), 487 (2007)
Haacke G, J. Appl. Phys., 47, 4086 (1976)
Bender M, Seelig W, Daube C, Frankenberger H, Ocker B, Stollenwerk J, Thin Solid Films, 326(1-2), 67 (1998)
Dawar A, Joshi J, J. Mater. Sci., 19, 1 (1984)

[1] Chopre K, Major S, Pandya D, Thin Solid Films, 102, 1 (1983)

[2] Sanon G, Rup R, Mansingh A, Thin Solid Films, 190, 287 (1990)

[3] Hamberg I, Granqvist C, J. Appl. Phys., 60, R123 (1986)

[4] Morgan DV, Aliyu YH, Bunce RW, Salehi A, Thin Solid Films, 312(1-2), 268 (1998)

[5] Kulkarni A, Schulz K, Lim T, Khan M, Thin Solid Films, 308, 1 (1997)

[6] Kim D, Vacuum, 81, 279 (2006)

[7] Kim D, Kim S, J. Vac. Sci. Technol. A, 20(4), 1314 (2002)

[8] Paik N, Appl. Surf. Sci., 226(4), 412 (2004)

[9] Lin L, Lai F, Qu Y, Gai R, Mat. Sci. Eng. B., 138, 166 (2007)

[10] Kim DH, Park MR, Lee HJ, Lee GH, Appl. Surf. Sci., 253(2), 409 (2006)

[11] Fallah HR, Ghasemi M, Hassanzadeh A, Steki H, Mater. Res. Bull., 42(3), 487 (2007)

[12] Haacke G, J. Appl. Phys., 47, 4086 (1976)

[13] Bender M, Seelig W, Daube C, Frankenberger H, Ocker B, Stollenwerk J, Thin Solid Films, 326(1-2), 67 (1998)

[14] Dawar A, Joshi J, J. Mater. Sci., 19, 1 (1984)