In0.27Ga0.73N/GaN 다중 양자우물 구조에 대한 광전기적 특성

박헌보; 배인호; 김기홍; Hun-Bo Park; In-Ho Bae; Ki-Hong Kim

Korean Journal of Materials Research, Vol.17, No.9, 489-492, September, 2007

DOI10.3740/MRSK.2007.17.9.489 Export Citation

In0.27Ga0.73N/GaN 다중 양자우물 구조에 대한 광전기적 특성

Optoelectronics Properties of In0.27Ga0.73N/GaN Multi-Quantum-Well Structure

박헌보, 배인호^†, 김기홍¹

영남대학교 물리학과
¹경운대학교 안경광학과

Hun-Bo Park, In-Ho Bae^†, and Ki-Hong Kim¹

Department of Physics, Yeungnam University, Gyeongsan 712-749, Korea
¹Department of Visual Optics, Kyungwoon University, Kumi 730-852, Korea

E-mail:

Temperature and injection current dependence of elctroluminescence(EL) spectral intensity of the multi-quantum-well(MQW) have been studied over a wide temperature and as a function of injection current level. EL peaks also show significant broadening into higher photon energy region with the increase of injection current. This is explained by the band-filling effect. When temperature is slightly increased to 300 from 15 K, the EL emission peak showed red-blue-red shift. It can be explained by the carrier localization by potential fluctuation of multiple quantum well and band-gap shrinkage as temperature increase. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents show a drastic difference. This unique EL efficiency variation pattern with temperature and current is explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields.

Keywords:InGaN/GaN;Multiple quantum well;Electroluminescence;Band-filling

[References]

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[1] Nakamura S, Senoh M, Iwasa N, Nagahama S, Yamada T, Mukai T, Jpn. J. Appl. Phys., 34, L1332 (1995)

[2] Chen ZZ, Liu P, Qi SL, Xu K, Qin ZX, Tong YZ, Yu TJ, Hu XD, Zhang GY, J. Cryst. Growth, 298, 731 (2007)

[3] Chen JH, Feng ZC, Tsai HL, Yang JR, Li P, Wetzel C, Detchprohm T, Nelson J, Thin Solid Films, 498(1-2), 123 (2006)

[4] Suihkonen S, Lang T, Svensk O, Sormunen J, Torma PT, Sopanen M, Lipsanen H, Odnoblyudov MA, Bougrov VE, J. Cryst. Growth, 300(2), 324 (2007)

[5] Look DC, Lu H, Schaff WJ, Jasinski J, Weber ZL, Appl. Phys. Lett., 80, 258 (2002)

[6] Lu H, schaff WJ, Hwang J, Wu H, Koley G, Eastman LF, Appl. Phys. Lett., 79, 1489 (2001)

[7] Inushima T, Mamutin VV, Vekshin VA, Ivanov SV, Sakon T, Motokawa M, Ohoya S, J. Cryst. Growth, 481, 227 (2001)

[8] Yong AM, Soh CB, Zhang XH, Chow SY, Chua SJ, Thin Solid Films, 515(10), 4496 (2007)

[9] Ji LW, Fang TH, Meen TH, Phys. Lett. A, 355, 118 (2006)

[10] Zhang GY, Yang ZY, Tong YZ, Qin ZX, Hu XD, Chen ZZ, Ding XM, Lu M, Li ZH, Yu TJ, Optical Materials, 23, 183 (2003)

[11] Pavesi M, Manfredi M, Salviat Gi, Armani N, Rossi F, Meneghesso G, Levada S, Zanoni E, Du S, Eliashevich I, Appl. Phys. Lett., 84, 3403 (2004)

[12] Reshchikov MA, Yi GC, Wessels BW, Phys. Rev. B, 59, 13116 (1999)

[13] Kaufmann U, Kunzer M, Maier M, Obloh H, Ramakrishnan A, Santic B, Schlotter P, Appl. Phys. Lett., 72, 1326 (1998)

[14] Pankove JI, Berkeyheiser JE, Maruska HP, Wittke J, Solid State Commun., 8, 1051 (1970)

[15] Lee CM, Chuo CC, Dai JF, Zheng XF, Chy JI, J. Appl. Phys., 89, 6554 (2001)

[16] Mukai T, Takekawa K, Nakamura S, Jpn. J. Appl. Phys. (Part 2), 37, L839 (1998)

[17] Chichibu S, Azuhata T, Sota T, Nakamura S, Appl. Phys. Lett., 69, 4188 (1996)

[18] Narakawa Y, Kawakami Y, Fujita S, Fujita S, Nakamura S, Phys. Rev. B, 55, R1938 (1997)

[19] Narukawa Y, Kawakami Y, Funato M, Fujita S, Fujita S, Nakamura S, Appl. Phys. Lett., 70, 981 (1997)

[20] Hori A, Yasunaga D, Satake A, Fujiwara K, J. Appl. Phy., 93, 3152 (2003)

[21] Cho YH, Gainer GH, Fischer AJ, Song JJ, Appl. Phys. Lett., 71, 569 (1997)

[22] Bakmiwewa P, Hori A, Satake A, Fujiwara K, Physica, E21, 636 (2004)

[23] Im JS, Kollmer H, Off J, Sohmer A, Scholz F, Hangleiter A, Phys. Rev. B, 57, R9435 (1998)