Removal of Organic Wax and Particles on Final Polished Wafer by Ozonated DI Water

Jae-Hwan Yi; Seung-Ho Lee; Tae-Gon Kim; Gun-Ho Lee; Eun-Suck Choi; Jin-Goo Park

Korean Journal of Materials Research, Vol.18, No.6, 307-312, June, 2008

DOI10.3740/MRSK.2008.18.6.307 Export Citation

Removal of Organic Wax and Particles on Final Polished Wafer by Ozonated DI Water

Jae-Hwan Yi, Seung-Ho Lee¹, Tae-Gon Kim¹, Gun-Ho Lee, Eun-Suck Choi, and Jin-Goo Park^{1, †}

Leading Technology Team, R&D Center, Siltron Inc., Gumi 730-724, Korea
¹Department of Materials Engineering, Hanyang University, Ansan 426-791, Korea

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In this study, a new cleaning process with a low cost of ownership (CoO) was developed with ozonated DI water (DIO3). An ozone concentration of 40 ppm at room temperature was used to remove organic wax film and particles. Wax residues thicker than 200 A remained after only a commercial dewaxer treatment. A DIO3 treatment in place of a dewaxer showed a low removal rate on a thick wax layer of 8000 A due to the diffusion-limited reaction of ozone. A dewaxer was combined with a DIO3 rinse to reduce the wax removaltime and remove wax residue completely. Replacing DI rinse with the DIO3 rinse resulted in a surface with a contact angle of less than 5o, which indicates no further cleaning steps would be required. The particle removal efficiency (PRE) was further improved by combining a SC-1 cleaning step with the DIO3 rinsing process. A reduction in the process time was obtained by introducing DIO3 cleaning with a dewaxing process.

Keywords:DIO3 (ozonated DI water);organic wax;dewaxer;final polished wafer;particle removal efficiency (PRE);wax removal

[References]

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Buhler RE, J. Phys. Chem., 88, 2560 (1984)
Buxton GV, Greenstock CL, Helman WP, Ross AB, J. Phys. Chem., 17, 513 (1988)

[Related Articles]

[1] Shimoi N, Kurokawa M, Tanabe A, Koizumi N, Matsushita Y, J. Cryst. Growth, 210(1-3), 31 (2000)

[2] Kern W, Puotien DA, R.C.A. Review, http://www.scopus.com/scopus/record/display.url?eid=2-s2.0-0014800514&view = basic & origin = inward & txGid = vq e4qM1SXw_P8reNqhp_zhk%3a2, 31(2), 187 (1970)

[3] Staehelin J, Hoigene J, Environ. Sci. Technol., 16, 676 (1983)

[4] Alder MG, Hill GR, J. Am. Chem. Soc., 72, 1884 (1950)

[5] Ohmi T, Isagawa T, Imaoka T, Sugiyama I, J. Electrochem. Soc., 139, 3336 (1992)

[6] Noda S, Kawase K, Horibe H, Kuzumoto M, Kataoka T, J. Electrochem. Soc., 152, 73 (2005)

[7] Hoigne J, Bader H, Dis. Org. Comp., 17, 185 (1983)

[8] Staehelin J, Hoigne J, Environ. Sci. Eng., 17, 183 (1982)

[9] Ojima S, Kubo K, Kato M, Toda M, Ohmi T, J. Electrochem. Soc., 144(4), 1482 (1997)

[10] De Smedt F, De Gendt S, Heyns MM, Vinckier C, Solid State Phenomena., 211, 76 (2001)

[11] Vankerckhoven H, Smedt FD, Herp BV, Claes M, Gendt SD, Heyns MM, Vinckier C, Ozone Sci. and Eng., 24, 391 (2002)

[12] Kumar R, Bose P, Ind. Eng. Chem. Res., 43(6), 1418 (2004)

[13] Hoigne J, Bader H, Inorg. Comp. and Rad. Wat. Res., 19, 993 (1985)

[14] Sonntag CV, J. Wat. Sup. Res. And Tech., 45, 84 (1996)

[15] Buhler RE, J. Phys. Chem., 88, 2560 (1984)

[16] Buxton GV, Greenstock CL, Helman WP, Ross AB, J. Phys. Chem., 17, 513 (1988)