The Effects of Codoping of Be and Mg on Incorporation of Mn in GaAs

Fucheng Yu; Cunxu Gao; P. B. Parchinskiy; Chandra Sekar.P.V; Dojin Kim; Chang Soo Kim; Hyojin Kim; Young Eon Ihm

Korean Journal of Materials Research, Vol.18, No.8, 444-449, August, 2008

DOI.3740/MRSK.2008.18.8.444 Export Citation

The Effects of Codoping of Be and Mg on Incorporation of Mn in GaAs

Fucheng Yu, Cunxu Gao, P. B. Parchinskiy, Chandra Sekar.P.V, Dojin Kim^†, Chang Soo Kim¹, Hyojin Kim , and Young Eon Ihm

School of Nano Science and Technology, Chungnam National University, Daejeon 305-764, Korea
¹Korea Research Institute of Standards and Science, Daejeon 305-606, Korea

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Samples of GaMnAs, GaMnAs codoped with Be, and GaMnAs simultaneously codoped with Be and Mg were grown via low-temperature molecular beam epitaxy (LT-MBE). Be codoping is shown to take the Ga sites into the lattice efficiently and to increase the conductivity of GaMnAs. Additionally, it shifts the semiconducting behavior of GaMnAs to metallic while the Mn concentration in the GaMnAs solid solution is reduced. However, with simultaneous codoping of GaMnAs with Be and Mg, the Mn concentration increases dramatically several times over that in a GaMnAs sample alone. Mg and Be are shown to eject Mn from the Ga sites to form MnAs and MnGa precipitates.

Keywords:GaMnAs;Be codoping;Mg codoping;MBE;Magnetic semiconductor PACS: 75.50Pp;75.70Ak;81.15.Hi

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[Related Articles]

[1] Ohno H, Science, 281, 951 (1998)

[2] Ohno H, Shen A, Matsukura F, Oiwa Z, Endo Z, Katsumoto S, IyeY, Appl. Phys. Lett., 69, 363 (1996)

[3] Hayashi T, Tanaka M, Nishinag T, Shimada H, Tsuchiya H, Otuka Y, J. Crystal Growth, 175, 1063 (1997)

[4] Van Esch A, Van Bockstal L, De Boeck J, Verbanck G, Van Steenbergen AS, Wellmann PJ, Grietens B, Bogaerts R, Herlach F, Borghs G, Phys. Rev. B, 56, 13103 (1997)

[5] Edmonds KW, Boguslawski P, Wang KY, Campion RP, Novikov SN, Farley NRS, Gallagher BL, Foxon T, Sawicki M, Dietl T, Buongiorno Nardelli M, Bernholc J, Phys. Rev. Lett., 92, 037201 (2004)

[6] Edmonds KW, Wang KY, Campion RP, Neumann AC, Farley NRS, Gallagher BL, Foxon CT, Appl. Phys. Lett., 81, 4991 (2002)

[7] Ku KC, Potashnik SJ, Wang RF, Chun SH, Schiffer P, Samarth N, Appl. Phys. Lett., 82, 2302 (2003)

[8] Chiba D, Takamura K, Matsukura F, Ohno H, Appl. Phys. Lett., 82, 3020 (2003)

[9] Naznul AM, Sugahara S, Tanaka M, Phys. Rev. B, 67, 241308 (2003)

[10] Nazmul AM, Amemiya T, Shuto Y, Sugahara S, Tanaka M, Phys. Rev. Lett., 95, 017201 (2005)

[11] Lee S, Chung SJ, Choi IS, Yuldashev SU, Im H, Kang TW, Lim WL, Sasaki Y, Liu X, Wojtowicz T, Furdyna JK, J. Appl. Phys., 93, 8307 (2003)

[12] Wojtowicz T, Lim WL, Liu X, Dobrowolska M, Furdyna JK, Yu KM, Walukiewicz W, Vurgaftman I, Meyer JR, Appl. Phys. Lett., 83, 4220 (2003)

[13] Onomitsu K, Fukui H, Maeda T, Hirayama Y, Horikoshi Y, J. Cryst. Growth, 278(1-4), 699 (2005)

[14] Kim JS, Bae IH, Leem JY, Noh SK, Lee JI, Kim JS, Kim SM, Son JS, Jeon M, J. Cryst. Growth, 226(1), 52 (2001)

[15] Kim KH, Lee KJ, Kim DJ, Kim HJ, Ihm YE, Kim CG, Yoo SH, Kim CS, Appl. Phys. Lett., 82, 4755 (2003)

[16] Kim KH, Lee KJ, Kim DJ, Kim CS, Lee HC, Kim CG, Yoo SH, Kim HJ, Ihm YE, J. Appl. Phys., 93, 6793 (2003)

[17] Kim KH, Park JB, Kim BD, Kim CS, Kim DJ, Kim HJ, Ihm YE, Metals Mater., 8, 177 (2002)

[18] Kim KH, Lee KJ, Kim DJ, Kim HJ, Ihm YE, Djayaprawira D, Takahashi M, Kim CS, Kim CG, Yoo SH, Appl. Phys. Lett., 82, 1755 (2003)

[19] Yu FC, Gao C, Kim DJ, Hong SK, Kim HJ, Ihm YE, J. Kor. Phys. Soc., 49, 596 (2006)

[20] Handbook of Physics, p. 1078, Benenson W, Harris JW, Stocker H, Lutz H eds., Springer-Verlag, New York, (2002). (2002)

[21] Gao CX, Yu FC, Choi AR, Kim DJ, Kim CG, Kim CS, Kim HJ, Ihm YE, J. Cryst. Growth, 291(1), 60 (2006)

[22] Tanaka M, Harbison JP, DeBoeck J, Sands T, Philips B, Cheeks TL, Keramidas VG, Appl. Phys. Lett., 62, 1565 (1993)

[23] Park YD, Lim JD, Suh KS, Shim SB, Lee JS, Abernathy CR, Pearton SJ, Kim YS, Khim ZG, Wilson RG, Phys. Rev. B, 68, 085210 (2003)