Structural and Optical Properties of Sol-gel Derived MgxZn1-xO Thin Films

In Soo Kim; Do Yun Kim; Se-Young Choi

Korean Journal of Materials Research, Vol.19, No.3, 125-131, March, 2009

DOI10.3740/MRSK.2009.19.3.125 Export Citation

Structural and Optical Properties of Sol-gel Derived MgxZn1-xO Thin Films

In Soo Kim, Do Yun Kim, and Se-Young Choi^†

School of New Materials Science and Engineering, Yonsei University, 134 Shinchondong, Seodaemungu, Seoul 120-749, Republic of Korea

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In this report, the structural and optical properties of sol-gel derived MgxZn1-xO thin films upon changes in the composition and annealing temperature were investigated. The Mg2+ content and the annealing temperature were varied in the range of 0≤ x ≤0.35 and 400 oC≤ T ≤600 oC, respectively. The films exhibited a hexagonal wurtzite structure of a polycrystalline nature. The optical transmittance exceeded 85% and the optical band gap of the film was tuned as high as 3.84 eV at a value of x = 0.35 (annealed at 400 oC), which was evidently the maximum Mg2+ content for the single-phase polycrystalline MgxZn1-xO thin films prepared in this experiment. The optical band gap and photoluminescence emission were tailored to the higher energy side while maintaining crystallinity without a significant change of the lattice constant.

Keywords:MgZnO;sol-gel;PL

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[2] Bagnall DM, Chen YF, Zhu Z, Yao T, Koyama S, Shen MY, Goto T, Appl. Phys. Lett., 70, 2230 (1997)

[3] Chakrabarti S, Ganguli D, Chaudhuri S, J. Phys. D., 36, 146 (2003)

[4] Srikant V, Clarke DR, J. Appl. Phys., 83, 5447 (1998)

[5] Krump R, Ferreira SO, Fashinger W, Brunthaler G, Sitter H, Mater. Sci. Forum, 182, 349 (1995)

[6] Shannon RD, Acta Crystallogr. Sect. A, 32, 145 (1976)

[7] Segnit ER, Holland AE, J. Am. Ceram. Soc., 48, 412 (1965)

[8] Ohtomo A, Kawasaki M, Koida T, Masubuchi K, Koinuma H, Sakurai Y, Yoshida Y, Yasuda T, Segawa Y, Appl. Phys. Lett., 72, 2466 (1998)

[9] Heitsch S, Benndorf G, Zimmermann G, Schulz C, Spemann D, Hochmuth H, Schmidt H, Nobis T, Lorenz M, Grundmann M, Appl. Phys. A, 88, 99 (2007)

[10] Zhu J, Kuznetsov AY, Han MS, Park YS, Ahn HK, Ju JW, Lee IH, Appl. Phys. Lett., 90, 211909 (2007)

[11] Gruber T, Kirchner C, Kling R, Reuss F, Waag A, Appl. Phys. Lett., 84, 5359 (2004)

[12] Jung EY, Lee SG, Sohn SH, Lee DK, Kim HK, Appl. Phys. Lett., 86, 153503 (2005)

[13] Park WI, Yi GC, Jang HM, Appl. Phys. Lett., 79, 2022 (2001)

[14] Zhao D, Liu Y, Shen D, Lu Y, Zhang J, Fan X, J. Appl. Phys., 90, 5561 (2001)

[15] Gosh R, Basak D, J. Appl. Phys., 101, 023507 (2007)

[16] Sharma AK, Narayan J, Muth JF, Teng CW, Jin C, Kvit A, Kolbas RM, Holland OW, Appl. Phys. Lett., 75, 3327 (1999)

[17] Minemoto T, Negami T, Nishiwaki S, Takakura H, Hamakawa Y, Thin Solid Films, 372(1-2), 173 (2000)

[18] Studenikin SA, Michael Cocivera, Kellner W, Pascher H, J. Lumin., 91, 223 (2000)

[19] Tomzig E, Helbig R, J. Lumin., 14, 403 (1976)

[20] Tang ZK, Wong QKL, Yu P, Appl. Phys. Lett., 72, 3270 (1998)

[21] Matsumoto T, Kato H, Miyamoto K, Sano M, Zhukov EA, Appl. Phys. Lett., 81, 1231 (2002)

[22] Chakrabarti S, Kar S, Dev A, Chaudhuri S, Phys. Stat. Sol. A, 202, 441 (2005)

[23] Lin B, Fu Z, Jia Y, Appl. Phys. Lett., 79, 943 (2001)

[24] Kang HS, Kang JS, Kim JW, Lee SY, J. Appl. Phys., 95, 1246 (2004)

[25] Lee EC, Kim YS, Jin YG, Chang KJ, Physica B, 308, 912 (2001)

[26] Dijken AV, Meulenkamp EA, Vanmaekelbergh D, Meijerink A, J. Lumin., 90, 123 (2000)