저온에서 형성된 니켈실리사이드의 적외선 흡수 특성

한정조; 송오성; 최용윤; Jeungjo Han; Ohsung Song; Youngyoun Choi

Korean Journal of Materials Research, Vol.19, No.4, 179-185, April, 2009

DOI10.3740/MRSK.2009.19.4.179 Export Citation

저온에서 형성된 니켈실리사이드의 적외선 흡수 특성

IR Absorption Property in Nano-thick Nickel Silicides

한정조^†, 송오성 , 최용윤

서울시립대학교 신소재공학과

Jeungjo Han^†, Ohsung Song , and Youngyoun Choi

Department of Materials Science and Engineering, University of Seoul, Cheonnong-dong, Dongdaemun-gu, Seoul 130-743, Korea

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We fabricated thermally evaporated 30 nm-Ni/(20 nm or 60 nm)a-Si:H/Si films to investigate the energy-saving property of silicides formed by rapid thermal annealing (RTA) at temperatures of 350oC, 450oC, 550oC, and 600oC for 40 seconds. A transmission electron microscope (TEM) and a high resolution X-ray diffractometer (HRXRD) were used to determine the cross-sectional microstructure and phase changes. A UVVIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM and HRXRD analysis, for the nickel silicide formed at low temperatures below 450oC, we confirmed columnar-shaped structures with thicknesses of 20~30 nm that had δ-Ni2Si phases. Regarding the nickel silicide formed at high temperatures above 550oC, we confirmed that the nickel silicide had more than 50 nm-thick columnar-shaped structures with a Ni31Si12 phase. Through UV-VIS-NIR analysis, nickel silicide showed almost the same absorbance in the near IR region as well as ITO. However, in the middle IR region, the nickel silicides with low temperature showed similar absorbance to those from high temperature silicidation.

Keywords:IR absorption;nickel silicide;low temperature;nano thickness;near IR

[References]

Makaka G, Meyer EL, McPherson M, Renew. Energy, 33(9), 1959 (2008)
Stempel T, Aggour M, Skorupska K, Munoz A, Lewerenz HJ, Electrochem. Commu., 10, 1184 (2008)
Kongtragool B, Wongwises S, Sol. Energy, 82(6), 493 (2008)
Cho SY, Lee MJ, Kim MS, Lee SR, Kim YK, Lee DH, Lee CW, Cho KH, Chung JH, J. Dermatological Sci., 50, 123 (2008)
Nakazono M, Hino T, J. Photochem. Photobio. A: Chem., 186, 99 (2007)
Stanley RM, The Lesna Lighting Handbook, 9th ed., p.152, Illuminating Engineering, New York, U.S.A. (2000). (2000)
Ji CK, Kor. Inst. Illumin. Elec. Install. Eng., 15, 1 (2001)
Kondilis A, Aperathitis E, Modreanu A, Thin Solid Films, 516(22), 8073 (2008)
Hartmann E, Boher P, Defranoux C, Jolivet L, Martin MO, J. Lumin., 110, 407 (2004)
Mayer JW, Lau SS, Electronic Materials Science : For Integrated Circuits in Si and GaAs, 1st ed., p.287-289, Macmillan Publishing Company, New York, U.S.A., (1990). (1990)
Williams DB, Carter CB, Transmission Electron Microscopy BasicsI, 1st ed., p.152-170, Plenum Press, New York, U.S.A., (1996). (1996)
Yoon KJ, Song OS, Han JJ, J. Kor. Inst. Met. Mater., 46, 11 (2008)

[Related Articles]

[1] Makaka G, Meyer EL, McPherson M, Renew. Energy, 33(9), 1959 (2008)

[2] Stempel T, Aggour M, Skorupska K, Munoz A, Lewerenz HJ, Electrochem. Commu., 10, 1184 (2008)

[3] Kongtragool B, Wongwises S, Sol. Energy, 82(6), 493 (2008)

[4] Cho SY, Lee MJ, Kim MS, Lee SR, Kim YK, Lee DH, Lee CW, Cho KH, Chung JH, J. Dermatological Sci., 50, 123 (2008)

[5] Nakazono M, Hino T, J. Photochem. Photobio. A: Chem., 186, 99 (2007)

[6] Stanley RM, The Lesna Lighting Handbook, 9th ed., p.152, Illuminating Engineering, New York, U.S.A. (2000). (2000)

[7] Ji CK, Kor. Inst. Illumin. Elec. Install. Eng., 15, 1 (2001)

[8] Kondilis A, Aperathitis E, Modreanu A, Thin Solid Films, 516(22), 8073 (2008)

[9] Hartmann E, Boher P, Defranoux C, Jolivet L, Martin MO, J. Lumin., 110, 407 (2004)

[10] Mayer JW, Lau SS, Electronic Materials Science : For Integrated Circuits in Si and GaAs, 1st ed., p.287-289, Macmillan Publishing Company, New York, U.S.A., (1990). (1990)

[11] Williams DB, Carter CB, Transmission Electron Microscopy BasicsI, 1st ed., p.152-170, Plenum Press, New York, U.S.A., (1996). (1996)

[12] Yoon KJ, Song OS, Han JJ, J. Kor. Inst. Met. Mater., 46, 11 (2008)