Physical and Microwave Dielectric Properties of the MgO-SiO2 System

Deuk Ho Yeon; Chan Su Han; Sung Hoon Key; Hyo Eun Kim; Jong Yun Kang; Yong Soo Cho

Korean Journal of Materials Research, Vol.19, No.10, 550-554, October, 2009

DOI10.3740/MRSK.2009.19.10.550 Export Citation

Physical and Microwave Dielectric Properties of the MgO-SiO2 System

Deuk Ho Yeon, Chan Su Han, Sung Hoon Key, Hyo Eun Kim, Jong Yun Kang¹, and Yong Soo Cho^†

Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
¹Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea

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Unreported dielectrics based on the binary system of MgO-SiO2 were investigated as potential candidates for microwave dielectric applications, particularly those demanding a high fired density and high quality factors. Extensive dielectric compositions having different molar ratios of MgO to SiO2, such as 2:1, 3:1, 4:1, and 5:1, were prepared by conventional solid state reactions between MgO and SiO2. 1 mol% of V2O5 was added to aid sintering for improved densification. The dielectric compositions were found to consist of two distinguishable phases of Mg2SiO4 and MgO beyond the 2:1 compositional ratio, which determined the final physical and dielectric properties of the corresponding composite samples. The increase of the ratio of MgO to SiO2 tended to improve fired density and quality factor (Q) without increasing grain size. As a promising composition, the 5MgO.SiO2 sample sintered at 1400 oC exhibited a low dielectric constant of 7.9 and a high Q × f (frequency) value of ~99,600 at 13.7 GHz.

Keywords:Mg2SiO4;MgO-SiO2;dielectric;microwave frequency;quality factor

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[1] Kim SJ, Kim ES, Korean J. Mater. Res., 17(8), 442 (2007)

[2] Cava RJ, J. Mater. Chem., 11, 54 (2001)

[3] Reaney IM, Iddles D, J. Am. Ceram. Soc., 89(7), 2063 (2006)

[4] Ohsato H, J. Ceram. Soc. Jpn., 113, 703 (2005)

[5] Brindley GW, Hayami R, Philos. Mag., 12, 505 (1965)

[6] Sugiyama T, Tsunooka T, Kakimoto K, Ohsato H, J. Eur, Ceram. Soc., 26, 2097 (2006)

[7] Song KX, Chen XM, Fan XC, J. Am. Ceram. Soc., 90(6), 1808 (2007)

[8] Surendram KP, Bijumon PV, Mohanan P, Sebastian MT, Appl. Phys. A., 81, 823 (2005)

[9] Ferreia VM, Azough F, Baptista JL, Freer R, Ferroelectrics, 133, 127 (1992)

[10] Sugihara J, Kakimoto K, Kagomiya I, Ohsato H, J. Eur, Ceram. Soc., 27, 3105 (2007)

[11] Song KX, Chen XM, Zheng CW, Ceram. Int., 34, 917 (2008)

[12] Ohsato H, Tsunooka T, Ando M, Ohishi Y, Miyauchi Y, Kakimoto K, J. Kor. Ceram. Soc., 40, 350 (2003)

[13] Lee ST, Jo YH, Kim HE, Youn DH, Choi IJ, Key SH, Kang CY, Hong WS, Cho YS, Adv. Appl. Ceram., (DOI: 10.1179, in press)

[14] Saberi A, Alinejad B, Negahdari Z, Kazemi F, Almasi A, Mater. Res. Bull., 42(4), 666 (2007)

[15] Sano S, Saito N, Matsuda S, Ohashi N, Haneda H, Arita Y, Takemoto M, J. Am. Ceram. Soc., 89(2), 568 (2006)

[16] Hakki BW, Coleman PD, IRE Trans. Microwave Theory Tech., MTT-8, 402 (1960)

[17] Gropyanov AV, Gropyanov VM, Refract. Ind. Ceram., 42, 162 (2001)

[18] Zubakov SM, Babin PN, Akishev AK, Refract. Ind. Ceram., 20, 311 (1979)