Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped SnO2) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of SrCu2O2, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at 950oC under N2 atmosphere, and single-phase SrCu2O2 thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at 500oC, 1% H2/(Ar + H2) atmosphere. 3% H2/(Ar + H2) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated SrCu2O2 thin films. The electrical conductivity, mobility of carrier and carrier density 5.27 × 10.2 S/cm, 2.2 cm2/Vs, 1.53 × 1017/cm3 a room temperature, respectively. Transmittance and optical band-gap of the SrCu2O2 thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained SrCu2O2 thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.