화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.20, No.12, 629-635, December, 2010
DOI10.3740/MRSK.2010.20.12.629  Export Citation
자장 구조 변화에 따른 High Power Impulse Magnetron Sputtering (HIPIMS)에서 Al-doped ZnO 박막 증착 특성
Magnetic Field Dependent Characteristics of Al-doped ZnO by High Power Impulse Magnetron Sputtering (HIPIMS)
박동희1, 양정도1, 2, 최지원3, 손영진3, 최원국1, †
  • 1한국과학기술연구원 광·전자재료센터
  • 2연세대학교 물리학과
  • 3한국과학기술연구원 전자재료센터
Dong-Hee Park1, Jeong-Do Yang1, 2, Ji-Won Choi3, Young-Jin Son4, and Won-Kook Choi1, †
  • 1Optoelectronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
  • 2Department of Physics, Yonsei University, Seoul 120-749
  • 3Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
  • 4Samwon Vacuum Co. Ltd., Incheon 404-280, Korea
E-mail:
In this study characteristics of Al-doped ZnO thin film by HIPIMS (High power impulse sputtering) are discussed. Deposition speed of HIPIMS with conventional balanced magnetic field is measured at about 3 nm/min, which is 30% of that of conventional RF sputtering process with the same working pressure. To generate additional magnetic flux and increase sputtering speed, electromagnetic coil is mounted at the back side of target. Under unbalanced magnetic flux from electromagnet with 1.5A coil current, deposition speed of AZO thin film is increased from 3 nm/min to 4.4 nm/min. This new value originates from the decline of particles near target surface due to the local magnetic flux going toward substrate from electromagnet. AZO film sputtered by HIPIMS process shows very smooth and dense film surface for which surface roughness is measured from 0.4 nm to 1 nm. There are no voids or defects in morphology of AZO films with varying of magnetic field. When coil current is increased from 0A to 1A, transmittance of AZO thin film decreases from 80% to 77%. Specific resistance is measured at about 2.9 × 10-2 Ω·cm. AZO film shows C-axis oriented structure and its grain size is calculated at about 5.3 nm, which is lower than grain size in conventional sputtering.
Keywords:AZO;HIPIMS;unbalanced magnetic field;magnetron
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