DC, pulse 조건에 따른 구리 도금층 미세 조직 관찰

윤지숙; 박찬수; 홍순현; 이현주; 이승준; 김양도; Jisook Yoon; Chansu Park; Soonhyun Hong; Hyunju Lee; Seungjun Lee; Yangdo Kim

Korean Journal of Materials Research, Vol.24, No.2, 105-110, February, 2014

DOI10.3740/MRSK.2014.24.2.105 Export Citation

DC, pulse 조건에 따른 구리 도금층 미세 조직 관찰

Microstructural Characteristics of Electro-Plated Cu Films by DC and Pulse Systems

윤지숙, 박찬수¹, 홍순현¹, 이현주¹, 이승준, 김양도 ^{1, †}

부산대학교 차세대전자기판회로학과
¹부산대학교 재료공학부

Jisook Yoon, Chansu Park¹, Soonhyun Hong¹, Hyunju Lee¹, Seungjun Lee, and Yangdo Kim^{1, †}

Education Program for Samsung Advanced Integrated Circuit, Pusan National University, Busan 680-749, Korea
¹Department of Materials Science and Engineering, Pusan National University, Busan 680-749, Korea

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The aim of this work was to investigate the effects of electrodeposition conditions on the microstructural characteristics of copper thin films. The microstructure of electroplated Cu films was found to be highly dependent on electrodeposition conditions such as system current and current density, as well as the bath solution itself. The current density significantly changed the preferred orientation of electroplated Cu films in a DC system, while the solution itself had very significant effects on microstructural characteristics in a pulse-reverse pulse current system. In the DC system, polarization at high current above 30 mA, changed the preferred orientation of Cu films from (220) to (111). However, Cu films showed (220) preferred orientation for all ranges of current density in the pulse-reverse pulse current system. The grain size decreased with increasing current density in the DC system while it remained relatively constant in the pulse-reverse pulse current system. The sheet resistance increased with increasing current density in the DC system due to the decreased grain size.

Keywords:Cu films;electrodeposition;microstructural characteristics

[References]

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Hasegawa M, Nonaka Y, Negishi Y, Okinaka Y, Osaka T, J. Electrochem. Soc., 153(2), C117 (2006)
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Hatano T, Kurosawa Y, Miyake, J. Electron. Mater., 29(5), 611 (2000)
Kim YA, Chy J, Lim JS, Lee YW, Theories and Applications of Chem. Eng., 112(1), 20 (2006)
Jang JW, Ramanathan LN, Tang J, Frear DR, J. Electron. Mater., 37(2), 185 (2007)
OHNO I, J. Met. Finish Soc. Jpn., 39(4), 149 (1988)
Barret C, Massalski TB, Oxford, “Structure of Metals,” pp.204, Pergamon Press. (1980)
Sundquist BE, Acta. Met., 12, 67 (1964)

[Related Articles]

[1] Sikder AK, Kumar A, Shukla P, Zantye PB, Sanganaria M, J. Electron. Mater., 32(10), 1028 (2003)

[2] Hasegawa M, Nonaka Y, Negishi Y, Okinaka Y, Osaka T, J. Electrochem. Soc., 153(2), C117 (2006)

[3] The WH, Koh LT, Chen SM, Xie J, Li CY, Foo PD, Microelectron. J., 32, 579 (2001)

[4] Liu DS, Chen CY, Chao YC, J. Electron. Mater., 35(5), 958 (2006)

[5] Liu G, Kuo Y, Ahmed S, Buckley DN, Tanaka-Ahmed T, J. Electrochem. Soc., 155(6), H432 (2008)

[6] Merchant HD, Minor MG, Liu YL, J. Electron. Mater., 28(9), 998 (1999)

[7] Hatano T, Kurosawa Y, Miyake, J. Electron. Mater., 29(5), 611 (2000)

[8] Kim YA, Chy J, Lim JS, Lee YW, Theories and Applications of Chem. Eng., 112(1), 20 (2006)

[9] Jang JW, Ramanathan LN, Tang J, Frear DR, J. Electron. Mater., 37(2), 185 (2007)

[10] OHNO I, J. Met. Finish Soc. Jpn., 39(4), 149 (1988)

[11] Barret C, Massalski TB, Oxford, “Structure of Metals,” pp.204, Pergamon Press. (1980)

[12] Sundquist BE, Acta. Met., 12, 67 (1964)