알루미늄 에치피트에 ZrO2 막의 졸-겔 코팅 및 양극산화 특성

Fei Chen; 박상식; Fei Chen; Sang-Shik Park

Korean Journal of Materials Research, Vol.24, No.5, 259-265, May, 2014

DOI10.3740/MRSK.2014.24.5.259 Export Citation

알루미늄 에치피트에 ZrO2 막의 졸-겔 코팅 및 양극산화 특성

Sol-gel Coating of ZrO2 Film in Aluminium Etch Pit and Anodizing Properties

Fei Chen, 박상식^†

경북대학교 나노소재공학부

Fei Chen, and Sang-Shik Park^†

School of Nano Materials Engineering, Kyungpook National University, Gyeongbuk 742-711, Korea

E-mail:

ZrO2 films were coated on aluminum etching foil by the sol-gel method to apply ZrO2 as a dielectric material in an aluminum(Al) electrolytic capacitor. ZrO2 films annealed above 450 oC appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The ZrO2 films annealed at 500 oC exhibited a dielectric constant of 33 at 1 kHz. Also, uniform ZrO2 tunnels formed in Al etch-pits 1 μm in diameter. However, ZrO2 film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, ZrO2-coated Al etching foils were anodized at 300 V. After being anodized, the Al2O3 film grew in the directions of both the Al-metal matrix and the ZrO2 film, and the ZrO2-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the ZrO2-coated Al foil exhibited only a small increase because the thickness of the Al2O3 film was 4-5 times thicker than that of ZrO2 film.

Keywords:capacitor;dip coating;sol-gel;anodizing;ZrO2

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[2] Takahashi H, Nagayama M, Electrochim. Acta, 23, 279 (1978)

[3] Shikanai M, Sakairi M, Takahashi H, Seo M, Takahiro K, Nagata S, Yamaguchi S, J. Electrochem. Soc., 144(8), 2756 (1997)

[4] Watanabe K, Sakairi M, Takahashi H, Hirai S, Yamaguchi S, J. Electroanal. Chem., 473(1-2), 250 (1999)

[5] Watanabe K, Sakairi M, Takahashi H, Takahiro K, Nagata S, Hirai S, Electrochemistry, 67, 1243 (1999)

[6] Park SS, Lee BT, J Electroceramics., 13, 111 (2004)

[7] Ivanova T, Harizanova A, Koutzarova T, Krins N, Vertruyen B, Mater. Sci. Eng. B, 165, 212 (2009)

[8] Cueto LF, Sanchez E, Torres-Martinez LM, Hirata GA, Mater. Charact., 55, 263 (2005)

[9] Joy K, Berlin IJ, Nair PB, Lakshmi JS, Daniel GP, Thomas PV, J. Phys. Chem. Solids, 72, 673 (2011)

[10] Attia SM, Wang J, Wu G, Shen J, Ma J, J. Mater. Sci. Technol., 18(3), 211 (2002)

[11] Brinker J, Frey GC, Hurd AJ, Ashley CS, Thin Solid Films, 201, 97 (1991)

[12] Ma CY, Lapostolle F, Briois P, Zhang QY, Appl. Surf. Sci., 253(21), 8718 (2007)

[13] Kuei PY, Chou JD, Huang CT, Ko HH, Su SC, J. Cryst. Growth, 314(1), 81 (2011)

[14] Jeong JH, Choi CH, Oh KH, Lee DN, J. Kor. Inst. Met. & Mater., 32, 378 (1994)

[15] Shimizu K, Thompson GE, Wood GC, Thin Solid Films, 81, 39 (1981)

[16] XU Y, Thompson GE, Wood GC, Bethune B, Corros. Sci., 27(1), 83 (1987)

[17] Kudo T, Alwitt RS, Electrochim. Acta, 23, 341 (1978)

[18] Takahashi H, Ikegami C, Seo M, Furuichi R, J. Electron Microsc., 40, 101 (1991)