Controlled oxidation level of reduced graphene oxides and its effect on thermoelectric properties

Jaeyoo Choi; Nguyen D. K. Tu; Sang-Soo Lee; Hyunjung Lee; Jin Sang Kim; Heesuk Kim

Macromolecular Research, Vol.22, No.10, 1104-1108, October, 2014

DOI10.1007/s13233-014-2160-4 Export Citation

Controlled oxidation level of reduced graphene oxides and its effect on thermoelectric properties

Jaeyoo Choi¹, Nguyen D. K. Tu^{1, 2}, Sang-Soo Lee^{1, 3}, Hyunjung Lee⁴, Jin Sang Kim⁵, and Heesuk Kim^{1, 2, †}

¹Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul, 136-791, Korea
²University of Science and Technology (UST), Daejeon, 305-333, Korea
³KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 136-701, Korea
⁴School of Advanced Materials and Engineering, Kookmin University, Seoul, 136-702, Korea
⁵Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 136-791, Korea

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We investigated the thermoelectric properties of reduced graphene oxide (rGO) as a function of the oxidation level of rGO. rGO among graphene derivatives was selected as a thermoelectric material since rGO bucky paper shows low thermal conductivity due to the phonon scattering at the junctions of rGO nanoplatelets. The oxdation level of rGO was controlled by differing the amount of chemical reductant (hydrazine) used to reduce graphene oxide (GO) to rGO, which correspondingly affected the electrical conductivity and Seebeck coefficient of rGO film. In this study, the maximum of figure of merit (ZT) was found to reach to 1.1×10^(-4) at 298 K for rGO reduced with the hydrazine of 1000 μL. These results provide the first experimental evidence that the thermoelectric performance of graphene and its derivative can be controlled by the oxidation level of graphitic nanoplatelets.

Keywords:reduced graphene oxide;oxidation level;thermoelectric properties

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[4] Winder EJ, Ellis AB, Lisensky GC, J. Chem. Educ., 73, 940 (1996)

[5] Ouyang Y, Guo J, Appl. Phys. Lett., 94, 263107 (2009)

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[9] Kovtyukhova NI, Ollivier PJ, Martin BR, Mallouk TE, Chizhik SA, Buzaneva EV, Gorchinskiy AD, Chem. Mater., 11, 771 (1999)

[10] Hummers WS, Offeman RE, J. Am. Chem. Soc., 80, 1339 (1958)

[11] Yang D, Velamakanni A, Bozoklu G, Park S, Stoller M, Piner RD, Stankovich S, Jung I, Field DA, Ventride Jr. CA, Ruoff RS, Carbon, 47, 145 (2009)

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[13] Bagri A, Mattevi C, Acik M, Chabal YJ, Chhowalla M, Shenoy VB, Nat. Chem., 2, 581 (2010)

[14] Snyder GJ, Toberer ES, Nat. Mater., 7(2), 105 (2008)

[15] Dubey N, Leclerc M, Polym. Phys., 49, 467 (2009)

[16] Park YW, Lee YS, Park C, Shacklette LW, Baughman RH, Solid State Commun., 63, 1063 (1987)

[17] Shinohara Y, Ohara K, Nakanishi H, Imai Y, Isoda Y, Mater. Sci. Forum, 492-493, 141 (2005)

[18] Li J, Tang X, Li H, Yan Y, Zhang Q, Synth. Met., 160, 1153 (2010)

[19] Hiroshige Y, Ookawa M, Toshima N, Synth. Met., 157, 467 (2007)

[20] Hu E, Kaynak A, Li Y, Synth. Met., 150, 139 (2005)

[21] Balandin AA, Ghosh S, Bao W, Calizo I, Teweldebrhan D, Miao F, Lau CN, Nano Lett., 8, 902 (2008)

[22] Chasmar R, Stratton R, J. Electron. Control, 7, 52 (1959)

[23] Mahan GD, J. Appl. Phys., 65, 1578 (1989)

[24] Sofo JO, Mahan GD, Phys. Rev. B, 49, 4565 (1994)

[25] Shen Y, Zhou P, Sun QQ, Wan L, Li J, Chen LY, Zhang DW, Wang XB, Appl. Phys. Lett., 99, 141911 (2011)

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