The conduction mechanisms through a lead zirconate titanate (PZT) thin film grown by pulsed laser deposition with a La0.67Sr0.33MnO3 (LSMO) buffer layer on epitaxial Pt (111) were assessed in the 230-330 K temperature range. X-Ray diffraction and transmission electron microscopy evidenced a columnar growth of (001)- and (011)-oriented Pit grains. The leakage current through the Pt/PZT/LSMO/Pt structure was then systematically measured. From current vs. time curves, a threshold voltage was found below which stable and reproducible current values are obtained, thus avoiding resistance degradation. The conduction mechanism changes from interface controlled at low temperatures to bulk controlled around room temperature. The hopping-type conductivity evidenced above 270 K is consistent with the extended defects and columnar microstructure of the Pit film. (C) 2014 Elsevier B.V. All rights reserved.