In rapid-melting-crystallization of network Ge-on-insulator (GOI), coalescence of growth-fronts inevitably occurs. To clarify crystallinity of the coalesced regions of two growth-fronts in GOI stripes, scanning electron microscopy and transmission electron microscopy analyses are performed. These analyses reveal that lattice planes of two growth-fronts coherently align without strains for short growth-distance (<= 5 mu m). The lattice planes at growth-fronts start to tilt gradually for growth-distance above 5 mu m. For intermediate growth distance (5-150 mu m), slightly-tilting lattice-planes coherently align without generating any defects, where locally-distributed strains are induced in the coalesced regions. On the other hand, for long growth-distance (>= 150 mu m), grain-boundaries are generated in coalesced regions, and the locally-distributed strains are relaxed. The coherent lattice-alignment for growth-distance below 150 mu m is attributed to atomic reordering in the coalesced regions, where coalescence occurs at high temperatures around the solidification point of Ge. (c) 2013 Elsevier B.V. All rights reserved.