We have evaluated the conformality and electrical properties of Al2O3 films deposited by atomic layer deposition at temperatures below 300 degrees C for through-silicon via (TSV) applications. Al2O3 films were able to be conformally deposited on the scallops of 50-mu m-wide, 100-mu m-deep TSV at the temperature range between 200 and 300 degrees C. The median breakdown fields of the metal-insulator-metal device with 30-nm-thick Al2O3 layer were above 6 MV/cm for the films deposited at 250 and 300 degrees C, while that at 200 degrees C was inferior due to residual carbon impurities in the oxide layer. (C) 2014 Elsevier B.V. All rights reserved.