This report describes the dielectric properties of electron-beam deposited Y2O3 thin films examined in metal-insulator-metal-type structures fabricated onto quartz substrates. The dielectric measurements have been carried out in the frequency domain from 10 mHz to 10 MHz, with a frequency response analyser. Frequency characteristics of the complex capacitance, as well as Cole-Cole and Nyquist graphs, have been presented and discussed for the temperature range 398-523 K. The results have been analyzed in terms of equivalent circuit models containing resistance-capacitance and constant phase elements (CPE). We have determined the values of the resistance, capacitance and CPE, which characterize the Y2O3 film and near-electrode regions. It has been shown that for high frequencies/low temperatures the dielectric properties are connected with Y2O3 film, while for low frequencies/high temperatures the dielectric response is dominated by the near-electrode regions. In the frequency range 0.1-10 MHz the important contribution of series resistance of electrodes and leads has been observed. (C) 2013 Elsevier B. V. All rights reserved.