Zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films were deposited via atmospheric pressure plasma enhanced chemical vapor deposition. A second-generation precursor, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N'-diethylethylenediamine) zinc, exhibited significant vapor pressure and good stability at one atmosphere where a vaporization temperature of 110 degrees C gave flux similar to 7 mu mol/min. Auger electron spectroscopy confirmed that addition of H2O to the carrier gas stream mitigated F contamination giving nearly 1: 1 metal: oxide stoichiometries for both ZnO and AZO with little precursor-derived C contamination. ZnO and AZO thin film resistivities ranged from 14 to 28 Omega.cm for the former and 1.1 to 2.7 Omega.cm for the latter. (C) 2013 Elsevier B. V. All rights reserved.