The aim of this work is to study oxide removal processes on GaAs (111) A substrates previous to epitaxial growth. We have studied conventional thermal desorption and processes based on the reduction of surface oxides by deposition of gallium, indium and exposure to atomic hydrogen. We have determined substrate temperatures (T-s) for optimum oxide removal in epi-ready substrates by the different studied processes: T-s = 540 degrees C for thermal desorption, T-s = 505 degrees C for indium deposition and Ts = 400 degrees C for oxide desorption by exposure to atomic hydrogen. All these processes allow for a subsequent good quality epitaxial growth. These results cannot be directly extended to oxide removal in grown samples that have been exposed to air outside the growth chamber. In this case, we have found that only indium deposition and exposure to atomic hydrogen are compatible with regrowth processes. (C) 2013 Elsevier B.V. All rights reserved.