Cu2SnSe3 (CTSe) thin films were deposited at various growth temperatures (325-425 degrees C) by coevaporation on soda-lime glass substrates without postannealing. X-ray diffraction and Raman analysis revealed that a single-phase CTSe thin film with a cubic structure was obtained at a growth temperature of 400 degrees C. The direct optical band gap of the films grown at different growth temperatures was found to vary from 0.84 to 2.1 eV. The optical absorption coefficient of the films was above similar to 10(4) cm(-1). All CTSe thin films showed p-type conductivity with carrier concentrations of 10(17)-10(21) cm(-3). Hole mobilities were found to range between 6.3 and 14 cm(2)V(-1) s(-1). Electrical properties changed significantly as a function of Cu/ Sn ratio and growth temperature. (C) 2013 Elsevier B.V. All rights reserved.