Diamond-like carbon (DLC) thin films were deposited on p-type Si (100) substrates by RF hollow cathode method under different RF power and pressure, using ethane as the precursor gas. The deposition rate of 45 nm/min was achieved, almost 4 times higher than by conventional radio frequency plasma enhanced chemical vapor deposition. The mechanism of fast DLC films deposition is attributed to high plasma density in RF hollow cathode method, discussed in this paper. Scanning electron microscopy and Raman spectroscopy were used to investigate the microstructure of DLC films. The film hardness and Young's modulus were measured by nanoindentation. (C) 2013 Elsevier B. V. All rights reserved.