The high quantum efficiency of donor-acceptor-pair emission in N and B co-doped 6H-SiC opens the way for SiC to constitute as an efficient light-emitting medium for white light-emitting diodes. In this work, we evidence room temperature luminescence in N and B co-doped 6H-SiC fluorescent material grown by the Fast Sublimation Growth Process. Three series of samples, with eight different N and B doping levels, were investigated. In most samples, from photoluminescence measurements a strong N-B donor-acceptor-pair emission band was observed at room temperature, with intensity dependent on the nitrogen pressure in the growth chamber and boron doping level in the source. Low temperature photoluminescence spectra showed that N bound exciton peaks exhibited a continuous broadening with increasing N-2 pressure during the growth, unambiguously indicating an opportunity to control the N doping in the epilayer by conveniently changing the N-2 pressure. Finally, the crystal quality of the N and B doped 6H-SiC was evaluated by X-ray diffraction measurements. The. rocking curves of (0006) Bragg diffractions from the samples grown with lower and higher N-2 pressure show almost the same value of the full width at half maximum as that collected from the substrate. This suggests that the N and B doping, which is expected to give rise to an efficient donor-acceptor-pair emission at room temperature, does not degrade the crystal quality. (C) 2012 Elsevier B. V. All rights reserved.