Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71x10(-4) Omega-cm, which can be decreased to 3.8x10(-5) Omega-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8x10(-3) Omega(-1). It was shown that the multilayer thin films have potential for applications in optoelectronics. (C) 2012 Elsevier B.V. All rights reserved.