CuGaSe2 (CGS) thin films were grown on uncoated and Mo-coated soda lime glass by Pulsed Electron Deposition (PED) technique at substrate temperatures comprised between 25 degrees C and 475 degrees C. X-ray diffraction analysis reveals that CGS samples exhibit a noteworthy crystal quality even at low growth temperature, T-g = 100 degrees C, whereas the out-of-plane preferential orientation of CGS chalcopyrite phase switches from < 220 > to < 112 > by increasing the substrate temperature. Annealing treatments seem to enhance the crystallinity of the film and to release the residual strain energy. Visible/near-infrared absorbance spectra show a monotonic decrease of CGS optical bandgap (from 1.75 to 1.65 eV) by enhancing the substrate temperature. Yet the morphology of CGS films strongly depends on T-g, which promotes the formation of larger columnar grains perpendicular to the growth plane. Grain dimensions of similar to 2 mu m are achieved when CGS films are grown at high temperature (>400 degrees C) on Mo-coated glass. The results indicate that PED is a promising growth technique for achieving good-quality CGS that can be useful as absorber layers in thin film solar cells. (C) 2012 Elsevier B.V. All rights reserved.