A novel technique of depositing multilayered films by introducing metal Zn layers in between Al-doped ZnO (AZO) films by using RF and DC magnetron sputtering has been proposed to enhance the electrical conductivity through mobility enhancement. The multilayered Zn/AZO films when annealed at 823 K, not only maintains high transparency in the visible-to-near infrared region but also shows very high mobility of 46 cm(2)/Vs which is thirteen times more than that of the AZO film and resistivity as low as 2.43 x 10(-4) Omega-cm. The highest figure of merit value is 8.6 x 10(-2) Omega(-1) which is more than double to that of the value of AZO film suggesting that these Zn/AZO films are very promising for solar cell applications. (C) 2013 Elsevier Ltd. All rights reserved.