We demonstrate reduction in surface recombination by integrating silicon (Si) nanocrystal layer on single crystalline Si solar cell. Si nanocrystals (NCs) are grown by electrochemical etching of (100) oriented p-type Si wafer. The substructures on the substrate are extracted and passivated it with hydrogen and 1-heptene molecules. Colloidal dispersion of Si NCs was spin casted on solar cell at room temperature. Apart from the I-V curve depicting the efficiency of solar cell, diffuse reflectance, measurement of short circuit current as a function of wavelength and current voltage characteristics of solar cell were recorded with and without NCs layer. The analysis showed 9.4% increase in Si solar cell efficiency due to the surface passivation effect offered by Si NCs. Measurements of surface recombination time confirms the improved passivation by NCs. (C) 2011 Elsevier Ltd. All rights reserved.