CuInSe2 thin films were prepared using sequential vacuum evaporation of In, Se and Cu at moderately low substrate temperatures, avoiding any treatment using toxic H2Se gas. The samples were annealed at 400 degrees C at a pressure of 10(-5) mbar to form CuInSe2. Structural, optical, electrical, compositional and morphological characterizations were carried out on these films. We could obtain highly stoichiometric film, using this simple method, without opting for co-evaporation or high substrate temperature for deposition. (C) 2009 Elsevier Ltd. All rights reserved.