Al-doped ZnO (AZO) films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. Crystal structure, surface morphology, electrical properties and infrared reflection of the AZO films were systematically investigated by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), Hall measurement system and Fourier Transform infrared spectroscopy, respectively. In addition, the corresponding properties of AZO films annealing at different temperatures ranging from room temperature to 400 degrees C were also analyzed. The results indicate that the prepared AZO films exhibit highest ZnO (0 0 2) peak intensity and lowest electrical resistivity after annealing at 300 degrees C. And AZO film with a low resistivity value of 0.0185 Omega-cm, a relatively high average infrared reflection of 40% can be acquired after the films were annealed at 300 degrees C. The high infrared reflection property of the AZO film makes it a promising candidate for future heat shielding film. (C) 2014 Elsevier B.V. All rights reserved.