Light-induced degradation in boron-doped p-type Czochralski silicon is caused by a boron-oxygen complex, which may be permanently deactivated by simultaneous illumination and heating leading to a permanent regeneration of carrier lifetime and solar cell performance. To date, the long-term stability of the regenerated state under thermal stress has not been fully investigated. In this work, we investigate whether the regeneration gain achieved on solar cell level is stable upon accelerated aging tests such as thermal cycling and damp-heat testing as applied during module certification according to IEC and UL standards. It is shown that regeneration is mostly conserved upon thermal cycling and cells in the degraded state may even be regenerated if current is injected during the treatment. Damp-heat testing at 85 degrees C in the dark for 1500 h decreases the regeneration-induced gain significantly but does not annihilate it completely. (C) 2013 Elsevier B.V. All rights reserved.