For the first time we performed the CMOS integration on hybrid SOI/Bulk wafers obtained by the local internal dissolution technique of the buried oxide (BOX). We compared the electrical performance of transistors fabricated on hybrid wafers and co-processed Ultra-Thin Body and Buried oxide (UTBB) and bulk silicon wafers. Devices on the FDSOI and bulk parts of hybrid substrates present similar carrier mobility than the references. Moreover, diodes with high forward current are achieved on the bulk part of the hybrid wafers. (C) 2013 Elsevier Ltd. All rights reserved.