Solid-State Electronics, Vol.81, 45-50, 2013
Solution based-spin cast processed organic bistable memory device
A two terminal organic bistable memory was fabricated by solution based spin casting of thin films of poly-[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEHPPV):ZnO nanoparticles onto ITO coated glass. The morphology of the thin films were characterized by Raman and FTIR spectroscopies. The electrical characterization showed that the two-terminal device exhibited excellent switching characteristics with ON/OFF ratio greater than 1 x 10(4) when the voltage was swept between -1 V and +1 V. The device maintained its state even after removal of the bias voltage. The device exhibited stable performance at various performance tests. Two distinct capacitance states with hysteresis were observed and we suggest that the switching mechanism involved could be attributed to trapping and detrapping of electrons. (C) 2012 Elsevier Ltd. All rights reserved.
Keywords:ZnO nanoparticle;Poly-[2-methoxy-5-(2 '-ethyl-hexyloxy)-1,4-phenylenevinylene];Organic bistable memory device;Trapping and detrapping of electrons mechanism