This paper reports the characteristics and reliability of nMOSFETs using the DBG process under mechanical tensile strain. Under a 0.075% longitudinal tensile strain, the increment rates of I-d,I-sat are 6.55% and 3.51% for 1 mu m and 0.135 mu m nMOSFET. The increment rate of I-d,I-sat is decreased and saturated, when the gate length is in the sub-micron region. Good fatigue properties and reliability are obtained after dynamic, static bending strain and hot carrier stress under a 0.075% longitudinal tensile strain. (C) 2012 Elsevier Ltd. All rights reserved.