Novel single-sided non-overlapped implantation (SNOI) nMOSFETs are characterized for their capability of multiple programmable memory functions. These devices can be operated as mask ROMs, EEPROMs or anti-fuses by using a pure logic processing. To function as mask ROMs, they can be mask-coded with the source drain extension (SDE) implantation. They can also be used as EEPROM devices by trapping charges in the side-wall nitride spacers. Furthermore, SNOI devices can be used as antifuses by introducing the punch-through stress at the drain side. The SNOI devices were successfully demonstrated for antifuse operations with an extremely high program/initial readout current ratio exceeding 10(9) and a program speed as high as 1 mu s. These novel SNOI devices not only provide non-volatile memory solutions in standard CMOS processing but also give a flexible choice among mask ROM, antifuse and EEPROM functions. (C) 2011 Elsevier Ltd. All rights reserved.