Thin films of CdTe semiconductors were prepared by electrodeposition technique in aqueous solutions. The deposition mechanism was investigated by cyclic voltammetry. The potential regions for the formation of the n-CdTe and p-CdTe films were determined. The structure, composition and morphology characteristics of as-deposited thin films of CdTe grown on SnO2/glass and CdS/SnO2/glass were investigated by XRD, EDAX and SEM techniques. The optical properties were measured to determine the absorption coefficient and band gap values. The as-deposited CdTe films grown on SnO2/glass contained free Te while those grown on CdS/SnO2/Glass did not contain this phase. The CdTe has the cubic structure with strong (111) orientation. The EDAX analysis showed a nearly stiochiometric Cd:Te ratio. The band gap has a value of 1.48 eV, which is in a good accordance with those reported in the literature. The effect of annealing at 350 and 400 degreesC after CdCl2 treatment on the structure and morphology was also examined.