Programmed Rate Chemical Vapor Deposition to Decrease Processing Time

Jung-Hwan Park

Journal of Industrial and Engineering Chemistry, Vol.2, No.2, 171-180, November, 1996

Dept. of Chem. Eng., Institute of Polymer Scienc and Eng., Inah University, Inchon 402-751, Korea

A transient reactor scale model and diffusion reaction model are used to demonstrate the use of "programmed rate chemical vapor deposition" (PRCVD) in order to decrease processing time in a single wafer reactor for blanket tungsten LPCVD. The use of PRCVD permits on increase in the average deposition rate for a process, while achieving a specified step coverage. The PRCVD concept is demonstrated by simultaneously ramping the susceptor temperature from 873 K to 643 K and introducing the flow rate of tungsten hexafluoride from 0 to 60 sccm during deposition. The reactant flows remained constant, after the tungsten hexafluoride startup transient was established. The deposition time required to close a 1 ㎛ wide by 4 ㎛ deep trench with rectangular cross section is compared using both the PRCVD path and a constant rate chemical vapor deposition (CRCVD) process with a temperature of 723 K and the same reactant flow rates as those used in the PRCVD. The time saved by the PRCVD is 63% over the CRCVD for a given step coverage of 98%.

[References]

Moslehi MM, Chapman RA, Wong M, Paranjpe A, Najm HN, Kuehne J, Yeakley RL, Davis CJ, IEEE Trans. Electron Devices, ED39, 4 (1992)
Lam DK, Koch GR, Solid State Technol., 23, 99 (1980)
Park JH, Korean J. Chem. Eng., 13(2), 105 (1996)
Cale TS, Raupp GB, Park JH, Jain MK, Rogers BR, "First International Conference on Transport Phenomena in Processing," S. Guceri, ed., Technomic Publishing Company, 127 (1992)
Cale TS, Raupp GB, Park JH, Rapid Thermal and Integrated Processing, MRS Symp. Proc., 224, MRS, 171 (1991)
Cale TS, Park JH, Raupp GB, Jain MK, Rogers BR, Advanced Metallization for ULSI Applications, V.V.S. Rana, R.V. Joshi and I. Ohdomari, eds., MRS, p. 93 (1992)
Shon Y, McConica CM, Tungsten and Other Advanced Metals for VLSI Applications in 1990, G.C. Smith and R. Blumenthal, eds., MRS, p. 257 (1991)
Cale TS, Jain MK, Raupp GB, J. Electrochem. Soc., 137, 1526 (1990)
Cale TS, Raupp GB, Jain MK, Thin Solid Films, 193, 51 (1990)
Cale TS, Jain MK, Raupp GB, "Tungsten and Other Advanced Metals for ULSI/VLSI Applications," V.S.S. Wong and S. Furukawa, Eds., 179 Materials Research Society (1990)
Kleijn CR, Hoogendoorn CJ, Hasper A, Holleman J, Middelhoek J, J. Electrochem. Soc., 138, 509 (1991)
Kleijn CR, Hoogendoorn CJ, Hasper A, Holleman J, Middelhoek J, J. Electrochem. Soc., 138, 1728 (1991)
Kleijn CR, vanderMeer H, Hoogendoorn CJ, J. Electrochem. Soc., 136, 3423 (1989)
Park JH, Ph.D. Dissertation, Arizona State University, U.S.A. (1992)
Cooke MJ, Harris G, J. Vac. Sci. Technol. A, 7, 3217 (1989)
Ikegawa M, Kobayashi J, J. Electrochem. Soc., 136, 2982 (1989)
Cheng LY, McVittie JP, Saraswat KC, Appl. Phys. Lett., 58, 2147 (1991)
McConica CM, Chatterjee S, Sivaram S, "Fifth Annual IEEe VLSI Multilevel Interconnection Conference," June, 268 Santa Babara, CA (1988)
Chatterjee S, McConica CM, J. Electrochem. Soc., 137, 328 (1990)
Raupp GB, Cale TS, Chem. Mater., 1, 207 (1989)
Cale TS, Shermansky FA, Raupp GB, Tungsten and Other Refractory Metals for VLSI Applications IV, R.S. Blewer and C.M. McConica, Eds., 183 MRS Publishers, Pittsburg, PA (1989)
Cale TS, Raupp GB, J. Vac. Sci. Technol. B, 8, 1242 (1990)
Cale TS, Gandy TH, Raupp GB, J. Vac. Sci. Technol. A, 9, 524 (1991)
Islamraja MM, Capelli MA, McVittie JP, Saraswat KC, J. Appl. Phys., 70, 7137 (1991)
Hsieh JJ, Joshi RV, "Advanced Metallization for ULSI Applications," V.V.S. Rana, R.V. Joshi, and I. Ohdomari, eds., 77 MRS (1992)
Singh VK, Shaqfeh ESG, McVittie JP, J. Vac. Sci. Technol. B, 10(3), 1091 (1992)
Cale TS, Jain MK, Duffin R, Tracy CJ, J. Vac. Sci. Technol. B, 11, 311 (1993)
Cale TS, Raupp GB, Gandy TH, J. Vac. Sci. Technol. A, 10, 1128 (1992)
McConica CM, Krishnamani K, J. Electrochem. Soc., 133, 2542 (1986)
vanderPutte P, Philips J. Res., 42, 608 (1987)
Broadbent EK, Ramiller CL, J. Electrochem. Soc., 131, 1427 (1984)
Arora R, Pollard R, J. Electrochem. Soc., 138, 1523 (1991)
Cale TS, Park JH, Gandy TH, Raupp GB, Jain MK, Chem. Eng. Commun., 119, 197 (1993)
Cale TS, Raupp GB, Chaara MB, Shemansky FA, Thin Solid Films, 220, 66 (1992)
Hess DW, Jensen KF, Anderson TJ, Rev. Chem. Eng., 3, 97 (1985)
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[Referenced By]

[1] Moslehi MM, Chapman RA, Wong M, Paranjpe A, Najm HN, Kuehne J, Yeakley RL, Davis CJ, IEEE Trans. Electron Devices, ED39, 4 (1992)

[2] Lam DK, Koch GR, Solid State Technol., 23, 99 (1980)

[3] Park JH, Korean J. Chem. Eng., 13(2), 105 (1996)

[4] Cale TS, Raupp GB, Park JH, Jain MK, Rogers BR, "First International Conference on Transport Phenomena in Processing," S. Guceri, ed., Technomic Publishing Company, 127 (1992)

[5] Cale TS, Raupp GB, Park JH, Rapid Thermal and Integrated Processing, MRS Symp. Proc., 224, MRS, 171 (1991)

[6] Cale TS, Park JH, Raupp GB, Jain MK, Rogers BR, Advanced Metallization for ULSI Applications, V.V.S. Rana, R.V. Joshi and I. Ohdomari, eds., MRS, p. 93 (1992)

[7] Shon Y, McConica CM, Tungsten and Other Advanced Metals for VLSI Applications in 1990, G.C. Smith and R. Blumenthal, eds., MRS, p. 257 (1991)

[8] Cale TS, Jain MK, Raupp GB, J. Electrochem. Soc., 137, 1526 (1990)

[9] Cale TS, Raupp GB, Jain MK, Thin Solid Films, 193, 51 (1990)

[10] Cale TS, Jain MK, Raupp GB, "Tungsten and Other Advanced Metals for ULSI/VLSI Applications," V.S.S. Wong and S. Furukawa, Eds., 179 Materials Research Society (1990)

[11] Kleijn CR, Hoogendoorn CJ, Hasper A, Holleman J, Middelhoek J, J. Electrochem. Soc., 138, 509 (1991)

[12] Kleijn CR, Hoogendoorn CJ, Hasper A, Holleman J, Middelhoek J, J. Electrochem. Soc., 138, 1728 (1991)

[13] Kleijn CR, vanderMeer H, Hoogendoorn CJ, J. Electrochem. Soc., 136, 3423 (1989)

[14] Park JH, Ph.D. Dissertation, Arizona State University, U.S.A. (1992)

[15] Cooke MJ, Harris G, J. Vac. Sci. Technol. A, 7, 3217 (1989)

[16] Ikegawa M, Kobayashi J, J. Electrochem. Soc., 136, 2982 (1989)

[17] Cheng LY, McVittie JP, Saraswat KC, Appl. Phys. Lett., 58, 2147 (1991)

[18] McConica CM, Chatterjee S, Sivaram S, "Fifth Annual IEEe VLSI Multilevel Interconnection Conference," June, 268 Santa Babara, CA (1988)

[19] Chatterjee S, McConica CM, J. Electrochem. Soc., 137, 328 (1990)

[20] Raupp GB, Cale TS, Chem. Mater., 1, 207 (1989)

[21] Cale TS, Shermansky FA, Raupp GB, Tungsten and Other Refractory Metals for VLSI Applications IV, R.S. Blewer and C.M. McConica, Eds., 183 MRS Publishers, Pittsburg, PA (1989)

[22] Cale TS, Raupp GB, J. Vac. Sci. Technol. B, 8, 1242 (1990)

[23] Cale TS, Gandy TH, Raupp GB, J. Vac. Sci. Technol. A, 9, 524 (1991)

[24] Islamraja MM, Capelli MA, McVittie JP, Saraswat KC, J. Appl. Phys., 70, 7137 (1991)

[25] Hsieh JJ, Joshi RV, "Advanced Metallization for ULSI Applications," V.V.S. Rana, R.V. Joshi, and I. Ohdomari, eds., 77 MRS (1992)

[26] Singh VK, Shaqfeh ESG, McVittie JP, J. Vac. Sci. Technol. B, 10(3), 1091 (1992)

[27] Cale TS, Jain MK, Duffin R, Tracy CJ, J. Vac. Sci. Technol. B, 11, 311 (1993)

[28] Cale TS, Raupp GB, Gandy TH, J. Vac. Sci. Technol. A, 10, 1128 (1992)

[29] McConica CM, Krishnamani K, J. Electrochem. Soc., 133, 2542 (1986)

[30] vanderPutte P, Philips J. Res., 42, 608 (1987)

[31] Broadbent EK, Ramiller CL, J. Electrochem. Soc., 131, 1427 (1984)

[32] Arora R, Pollard R, J. Electrochem. Soc., 138, 1523 (1991)

[33] Cale TS, Park JH, Gandy TH, Raupp GB, Jain MK, Chem. Eng. Commun., 119, 197 (1993)

[34] Cale TS, Raupp GB, Chaara MB, Shemansky FA, Thin Solid Films, 220, 66 (1992)

[35] Hess DW, Jensen KF, Anderson TJ, Rev. Chem. Eng., 3, 97 (1985)

[36] Jensen KF, Chem. Eng. Sci., 42, 923 (1987)