In2O3 materials consisting of dense arrays of vertically aligned rod-like structures were deposited on sapphire substrates by thermal chemical vapor deposition (CVD) using triethylindium (TEI) and oxygen as precursors at a substrate temperature of 350 degrees C. The rod-like structure with a triangular cross section had a cubic structure, exhibiting preferred crystallographic orientation in the [111] direction. The photoluminescence spectra of In2O3 structures under excitation at 325 nm revealed a visible emission.