The barrier height of as-deposited Cr contacts was found to be Phi(B)= 0.87eV with the ideality of eta=1.51 and remained almost unchanged after further annealing at 500 degrees C for 5 minutes. The barrier height of diodes were increased drastically after annealed at 600 degrees C where Phi(B)=1.01eV with eta=1.69. Upon annealing at 700 degrees C for 5 minutes, the Phi(B) decreased to 0.61eV and the Cr diodes were degraded for higher temperature in this annealing duration. The OB remained in 0.80-0.90eV respectively at 800 degrees C for 2 minutes and 900-1000 degrees C for 1 minute.