Large area 4H-SiC PIN diodes have been fabricated which exhibit a stable avalanche ranging between 4.5 and 5.5 W. The avalanche occurs at an electrical field strength of 2.1 MV/cm at the pn junction. The temperature coefficient of the avalanche is positive (0.3 V/K). The avalanche is tested in DC mode. The device concept as well as the fabrication process is described in detail. Static and dynamic characteristics are shown.