We investigated the effect of high temperature annealing on the Schottky barrier height (&UPhi;(b)) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the &UPhi;(b) increased and the leakage current decreased by annealing at 6000C, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 6000C showed a blocking-voltage (V-b) of 4.15 kV and a specific on resistance (R-on) of 9.07 m&UOmega; cm(2), achieving a high V-b(2)/R-on value of 1898 MW/cm(2).